DMP2036UVTQ-7

$0.12

Description：MOSFET BVDSS: 8V~24V TSOT26 T&R
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:bec2a86f2d3b Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 8V~24V TSOT26 T&R
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：20 V
Current - Continuous Drain (Id) @ 25°C：6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
Rds On (Max) @ Id, Vgs：30mOhm @ 6.4A, 4.5V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：20.5 nC @ 4.5 V
Vgs (Max)：±8V
Input Capacitance (Ciss) (Max) @ Vds：1808 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：1.1W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：TSOT-26
Package / Case：SOT-23-6 Thin, TSOT-23-6

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DMP2036UVTQ-7

Overview

The DMP2036UVTQ-7 is a P-channel enhancement mode MOSFET in a TSOT26 package. It features a drain-source voltage of -20V and a continuous drain current of -6.0A at +25°C. The on-resistance is 30mΩ at VGS=-4.5V and ID=-6.4A, or 39mΩ at VGS=-2.5V and ID=-4.8A. Total gate charge is 20.5nC. Thermal resistance junction-to-ambient is 108°C/W steady state. Operating temperature range is -55°C to +150°C.

Feature Summary

Designed for low on-state resistance while maintaining superior switching performance.
Features low input capacitance and fast switching speed.
Includes internal ESD protection diodes.
Qualified for automotive applications under AEC-Q101 standards.

Applications

DC-DC converters
Motor controls
Power-management functions
Analog switches

Procurement Notes

Verify the specific ordering suffix (e.g., -7 for 3,000 units or -13 for 10,000 units) against the required tape and reel quantity. Confirm that the component meets RoHS 3 compliance and halogen-free requirements if mandated by the design specifications. Ensure the TSOT26 footprint matches the PCB layout guidelines provided in the datasheet.

Selection Notes

Select this component when a compact P-channel MOSFET with high efficiency is required. The device offers a balance of low static resistance and dynamic switching capabilities suitable for power management circuits. Consider the thermal derating curves for operation above +25°C ambient temperature to ensure safe junction temperatures are maintained.

Part Context

This part belongs to Diodes Incorporated's line of surface-mount P-channel MOSFETs. It utilizes silicon technology and is housed in a molded plastic TSOT26 package. The device is manufactured in IATF 16949 certified facilities, supporting its qualification for automotive-grade environments requiring specific change control protocols.