DMP2040UND-13

Overview

The DMP2040UND-13 is a dual P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a POWERDI®3333-8 (Type UXB) case with a -20V drain-source voltage rating. The device provides a maximum on-resistance of 36mΩ at VGS = -4.5V and 60mΩ at VGS = -2.5V, supporting continuous drain currents of -5.3A at +25°C ambient temperature. Key electrical parameters include a gate threshold voltage range of -0.6V to -1.5V, total gate charge of 9.6nC at VGS = -4.5V, and an operating junction temperature range from -55°C to +150°C.

Feature Summary

• Dual P-channel configuration within a single compact package
• Low on-state resistance for high efficiency power management
• Fast switching speed with low input capacitance
• Totally lead-free and fully RoHS compliant

Applications

• Backlighting circuits
• Power management functions
• DC-DC converters

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 3000-unit tape and reel packaging format. Confirm that the component meets the required environmental standards, specifically the halogen and antimony-free 'Green' device definition. Ensure compatibility with the specified POWERDI3333-8 footprint during procurement planning.

Selection Notes

Select this component when a dual P-channel topology is required in a small surface-mount form factor. The low gate threshold voltage allows for effective drive from standard logic levels. Evaluate thermal performance based on the 148 °C/W junction-to-ambient resistance for steady-state applications on FR-4 substrates.

Part Context

This part belongs to the DMP2040 series of advanced generation MOSFETs designed to minimize on-state resistance while maintaining superior switching performance. It utilizes the POWERDI®3333-8 package, which offers a molded plastic construction with a matte tin annealed finish over a copper lead frame, suitable for automated surface mount assembly.

Replacement Considerations

DMP2040UND-7 is a verified substitute offering identical electrical characteristics but packaged in 2000-unit tape and reels.

FAQ

What is the maximum pulsed drain current capability?

The device supports a pulsed drain current of -25A with a 10μs pulse duration and a 1% duty cycle.

Is the body diode reverse recovery time specified?

Yes, the typical body diode reverse recovery time is 9.8ns when tested at IF = -8.9A and di/dt = -100A/μs.

What is the thermal resistance from junction to case?

The steady-state thermal resistance from junction to case is 13.2 °C/W.