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The DMP2040UVT-7 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a -20V drain-source breakdown voltage and a maximum continuous drain current of -5.5A at +25°C ambient temperature. The device exhibits a typical on-resistance of 38mΩ at VGS = -4.5V and 52mΩ at VGS = -2.5V. Total gate charge is typically 8.6nC at VGS = -4.5V. It operates within a junction temperature range of -55°C to +150°C and is housed in a TSOT26 surface-mount package.
Verify the specific ordering suffix, such as -7 or -13, against the manufacturer's official documentation to confirm the required tape and reel packaging quantity. Ensure that the component meets all applicable environmental compliance standards relevant to the target market before finalizing procurement specifications.
Select this component based on its -20V rating and low on-resistance characteristics suitable for compact power circuits. Evaluate thermal performance requirements against the specified thermal resistance values. Confirm compatibility with available gate drive voltages, particularly noting the distinct on-resistance values at -2.5V and -4.5V gate-source biases.
This part belongs to the DMP series of P-channel enhancement mode MOSFETs from Diodes Incorporated. These devices are engineered to minimize on-state resistance while maintaining superior switching performance. The series targets applications requiring efficient power handling in small form factor packages.
Consult the manufacturer's official documentation for confirmed substitute part numbers. Verify pinout compatibility and electrical parameter alignment before considering alternative components.
The maximum gate-source voltage (VGSS) rating is ±12V.
Yes, the datasheet specifies forward voltage and reverse recovery characteristics for the intrinsic body diode.