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Product Detailed Parameters
- Description：MOSFET P-CH 20V 4.6A U-WLB1010-4
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：20 V
- Current - Continuous Drain (Id) @ 25°C：4.6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：2.5V, 4.5V
- Rds On (Max) @ Id, Vgs：45mOhm @ 1A, 4.5V
- Vgs(th) (Max) @ Id：1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：2.5 nC @ 4.5 V
- Vgs (Max)：-6V
- Input Capacitance (Ciss) (Max) @ Vds：218 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：1.4W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：U-WLB1010-4
- Package / Case：4-UFBGA, WLBGA
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Overview
The DMP2042UCB4-7 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a U-WLB1010-4 surface-mount package and utilizes silicon technology. Key electrical specifications include a drain-source breakdown voltage (Vds) of 20 V, a continuous drain current (Id) of 4.6 A, and a maximum gate-source voltage (Vgs) of 8 V. The device exhibits a typical on-resistance (Rds(on)) of 40 mΩ at Vgs = -4.5 V. Additional parameters include a gate charge (Qg) of 13.1 nC, a threshold voltage (Vgs(th)) of 400 mV, and a power dissipation (Pd) of 1.18 W. The component operates within a temperature range of -55°C to +150°C.
Feature Summary
- P-channel enhancement mode configuration for high-side switching applications
- Low on-resistance design for efficient power management
- Compact U-WLB1010-4 package for space-constrained layouts
Applications
- Battery protection circuits
- Power management IC load switches
- Portable electronic device power control
Procurement Notes
Verify the specific datasheet revision and RoHS compliance status directly with Diodes Incorporated or authorized distributors before procurement. Ensure that the ordering suffix matches the required tape-and-reel quantity. Confirm that the U-WLB1010-4 footprint aligns with your PCB design guidelines and thermal requirements. Cross-reference the part number against official manufacturer databases to avoid counterfeit components.
Selection Notes
Select this component when a low-voltage, high-current P-channel switch is required in a minimal footprint. Compare Rds(on) and Qg values against alternatives to optimize switching losses and conduction efficiency. Ensure the 20 V rating exceeds the maximum system voltage with adequate margin. Verify that the gate drive voltage is compatible with the 8 V maximum Vgs limit.
Part Context
This part belongs to Diodes Incorporated's portfolio of small-signal MOSFETs designed for portable electronics. The U-WLB series offers improved thermal performance and reduced board space compared to traditional SOT packages. It complements N-channel counterparts like the DMN2044UCB4-7 for complementary switching designs.
Replacement Considerations
Direct substitutes must match the P-channel type, 20 V rating, 4.6 A current, and U-WLB1010-4 package. Verify pinout compatibility and electrical parameters such as Rds(on) and Qg. Consult the manufacturer's official substitution guide for validated equivalents.
