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Product Detailed Parameters
- Description：MOSFET 2P-CH 20V 3.1A 6UDFN
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 P-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：3.1A (Ta)
- Rds On (Max) @ Id, Vgs：90mOhm @ 4A, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：6.8nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：634pF @ 10V
- Power - Max：740mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-UDFN Exposed Pad
- Supplier Device Package：U-DFN2020-6 (Type B)
- Grade：-
- Qualification：-
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Overview
The DMP2045UFDB-13 is a dual P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a U-DFN2020-6 package with a maximum height of 0.6mm and a PCB footprint of 4mm². The device supports a drain-source voltage (BVDSS) of -20V and continuous drain current (ID) of -3.1A at +25°C. Maximum on-resistance (RDS(ON)) is 90mΩ at VGS = -4.5V and 120mΩ at VGS = -2.5V. Total gate charge (Qg) is typically 6.8nC. Operating temperature range spans from -55°C to +150°C.
Feature Summary
- Dual channel configuration in a compact U-DFN2020-6 package
- Optimized for low on-state resistance and superior switching performance
- ESD protected gate structure
- Totally lead-free, fully RoHS compliant, and halogen/antimony-free
Applications
- Load Switch
- Power Management Functions
- Portable Power Adaptors
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the 10,000-unit tape and reel packaging format as defined in the manufacturer's documentation. Confirm that the component meets all required environmental standards, including RoHS compliance and UL flammability rating 94V-0, before finalizing procurement specifications.
Selection Notes
Select this component when a dual P-channel solution is required within a minimal 4mm² PCB footprint. Ensure the application operates within the -20V drain-source voltage limit and requires low on-resistance characteristics suitable for portable power adaptors or load switch applications.
Part Context
This part belongs to the DMP series of dual P-channel enhancement mode MOSFETs from Diodes Incorporated. It utilizes a U-DFN2020-6 Type B case constructed from molded plastic with NiPdAu terminal finishes over a copper lead-frame. The device is designed for surface mount assembly.
Replacement Considerations
The DMP2045UFDB-7 is an identical electrical alternative packaged in 3,000-unit tape and reels.
FAQ
What is the maximum continuous drain current for this device?
The maximum continuous drain current is -3.1A at an ambient temperature of +25°C.
Does the DMP2045UFDB-13 support automotive applications?
For automotive applications requiring AEC-Q100/101/200 qualification and PPAP capability, customers must contact Diodes Incorporated directly.
What is the typical total gate charge?
The typical total gate charge (Qg) is 6.8nC at VDS = -10V and ID = -4A.
