DMP2045UFY4-7

$0.37

Description：MOSFET P-CH 20V 4.7A X2-DFN2015
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:4546fdabff46 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET P-CH 20V 4.7A X2-DFN2015
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：20 V
Current - Continuous Drain (Id) @ 25°C：4.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：1.5V, 4.5V
Rds On (Max) @ Id, Vgs：45mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：6.8 nC @ 4.5 V
Vgs (Max)：±8V
Input Capacitance (Ciss) (Max) @ Vds：634 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：670mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：X2-DFN2015-3
Package / Case：3-XDFN

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DMP2045UFY4-7

Overview

The DMP2045UFY4-7 is a P-channel enhancement mode MOSFET from Diodes Incorporated, housed in an X2-DFN2015-3 surface-mount package. It features a drain-source voltage (V_DSS) of -20 V and a maximum continuous drain current (I_D) of -4.7 A at +25°C. The device exhibits a typical on-resistance (R_DS(ON)) of 45 mΩ at V_GS = -4.5 V and 90 mΩ at V_GS = -1.8 V. Total gate charge (Q_g) is typically 6.8 nC. Operating temperature ranges from -55°C to +150°C.

Feature Summary

Designed for high-efficiency power management with minimized on-state resistance and superior switching performance.
Features low input capacitance and fast switching speed for efficient operation.
Includes ESD protection on the gate terminal.
Totally lead-free, fully RoHS compliant, and halogen/antimony free.

Applications

Backlighting
Power Management Functions
DC-DC Converters

Procurement Notes

Verify the specific ordering suffix '-7' corresponds to the 3,000-unit tape and reel packaging configuration. Confirm that the component meets all applicable environmental directives, including RoHS 2 and RoHS 3 compliance standards. Ensure the requested part number matches the exact electrical characteristics and package dimensions specified in the official datasheet DS40494 Rev. 2-2 before finalizing procurement.

Selection Notes

Select this component for applications requiring a compact P-channel MOSFET with a -20 V rating. Evaluate the thermal resistance values based on the intended PCB copper area and mounting conditions. Consider the gate threshold voltage and total gate charge when designing the driving circuitry to ensure optimal switching speeds and minimize power losses during transitions.

Part Context

This component belongs to the DMP series of P-channel enhancement mode MOSFETs manufactured by Diodes Incorporated. It utilizes the X2-DFN2015-3 case style, which provides a small footprint suitable for space-constrained designs. The product line emphasizes low on-resistance and robust switching capabilities for modern electronic systems.

Replacement Considerations

Consult official manufacturer documentation for confirmed substitute part numbers. Verify compatibility regarding pinout, voltage ratings, current handling, and thermal characteristics before substituting any alternative components.