ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET P-CH 20V 4.1A U-WLB1010-4
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：20 V
- Current - Continuous Drain (Id) @ 25°C：4.1A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：2.5V, 4.5V
- Rds On (Max) @ Id, Vgs：47mOhm @ 1A, 4.5V
- Vgs(th) (Max) @ Id：1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：2.3 nC @ 4.5 V
- Vgs (Max)：-6V
- Input Capacitance (Ciss) (Max) @ Vds：218 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：1W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：U-WLB1010-4
- Package / Case：4-UFBGA, WLBGA
Download product information
Overview
The DMP2047UCB4-7 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a U-WLB1010-4 package with dimensions of 1.0mm x 1.0mm and a height of 0.62mm. Key electrical parameters include a drain-source voltage (BVDSS) of -20V, a typical static on-resistance (RDS(ON)) of 40mΩ at VGS = -4.5V, and a total gate charge (Qg) of 2.3nC. The device supports a continuous drain current of -4.1A at TA = +25°C and operates within a temperature range of -55°C to +150°C.
Feature Summary
- Utilizes LD-MOS technology to minimize on-state resistance while maintaining superior switching performance for high efficiency power management applications.
- Features an ultra-low gate charge of 2.3nC and a low turn-on potential threshold of -0.8V typ., enabling fast switching speeds.
- Incorporates ESD protection rated at 3kV HBM for the gate terminal.
Applications
- Battery Management Systems
- Load Switching Circuits
- Battery Protection Modules
Procurement Notes
Verify the specific ordering suffix '-7' corresponds to the 3,000-unit tape and reel packaging configuration. Confirm that the component meets RoHS 3 compliance standards and is halogen-free. Ensure the application environment does not exceed the maximum junction temperature rating of +150°C during operation.
Selection Notes
Select this component for designs requiring a compact footprint with a 1.0mm x 1.0mm case size. It is suitable for low-voltage (-20V) applications where minimizing conduction losses via low RDS(ON) is critical. Consider the thermal resistance characteristics when designing PCB layouts for adequate heat dissipation.
Part Context
This part belongs to the DMP series of P-channel MOSFETs from Diodes Incorporated. It is designed as a next-generation solution focusing on reducing figure of merit through optimized RDS(ON) and Qg values. The device is qualified to JEDEC standards for high reliability.
Replacement Considerations
For automotive applications requiring specific change control or AEC-Q qualification, refer to the related automotive grade parts with the 'Q-suffix'. Verify pinout compatibility and thermal characteristics when substituting other P-channel MOSFETs in existing designs.
FAQ
What is the maximum gate-source voltage rating?
The absolute maximum gate-source voltage (VGSS) rating is -6V.
Is this component suitable for life support devices?
No, Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without express written approval.
