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Product Detailed Parameters
- Description：MOSFET BVDSS: 8V~24V SOT23 T&R 3
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：20 V
- Current - Continuous Drain (Id) @ 25°C：4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
- Rds On (Max) @ Id, Vgs：60mOhm @ 4.2A, 4.5V
- Vgs(th) (Max) @ Id：900mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：10.2 nC @ 4.5 V
- Vgs (Max)：±12V
- Input Capacitance (Ciss) (Max) @ Vds：808 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：900mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-23-3
- Package / Case：TO-236-3, SC-59, SOT-23-3
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Overview
The DMP2065U-7 is a P-channel enhancement mode MOSFET from Diodes Incorporated, housed in an SOT-23 surface-mount package. It features a drain-source voltage rating of -20V and a maximum continuous drain current of -4.0A at +25°C. The device exhibits a low on-state resistance (RDS(on)) of 60mΩ max at VGS = -4.5V and 90mΩ max at VGS = -2.5V. Key electrical parameters include a gate threshold voltage range of -0.5V to -0.9V, total gate charge of 10.2nC typ, and input capacitance of 808pF typ. Operating temperature ranges from -55°C to +150°C.
Feature Summary
- Low on-resistance design for high-efficiency power management
- Fast switching speed with low input/output leakage
- Totally lead-free and fully RoHS compliant
- Halogen- and antimony-free green device
Applications
- High-efficiency power management applications
- Power distribution circuits
- Load switches
Procurement Notes
Verify the specific ordering suffix (-7 or -13) against project requirements, as packaging quantities differ between tape and reel configurations. Confirm compliance with environmental directives such as RoHS 2 and RoHS 3 during sourcing. Ensure the supplier provides traceability documentation matching the date code marking system defined in the datasheet to guarantee component authenticity.
Selection Notes
Select this component when a compact SOT-23 footprint is required for P-channel switching. Evaluate thermal performance based on the specified junction-to-ambient resistance values under steady-state conditions. Consider the gate threshold voltage limits to ensure compatibility with the driving logic levels in the target circuit design.
Part Context
This part belongs to the DMP2065U series of P-channel MOSFETs manufactured by Diodes Incorporated. It is designed to minimize on-state resistance while maintaining superior switching performance. An automotive-compliant variant, DMP2065UQ, is available under a separate datasheet for specialized reliability requirements.
Replacement Considerations
Check for the automotive-grade alternative DMP2065UQ if functional safety standards are required. Verify pinout compatibility and electrical ratings before substituting with other P-channel MOSFETs in similar packages.
