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Product Detailed Parameters
- Description：MOSFET 2P-CH 4.5A 6UDFN
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 P-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：4.5A (Ta)
- Rds On (Max) @ Id, Vgs：50mOhm @ 2A, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：9.1nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：752pF @ 15V
- Power - Max：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-UDFN Exposed Pad
- Supplier Device Package：U-DFN2020-6 (Type B)
- Grade：-
- Qualification：-
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Overview
The DMP2065UFDB-13 is a dual P-channel enhancement mode MOSFET in a U-DFN2020-6 package. It features a drain-source voltage of -20V and a maximum continuous drain current of -4.5A at +25°C. The on-resistance is 50mΩ max at VGS = -4.5V, and 100mΩ max at VGS = -2.5V. Total gate charge is typically 9.1nC. Operating temperature ranges from -55°C to +150°C.
Feature Summary
- Minimized on-state resistance for high efficiency power management
- Superior switching performance with low input capacitance
- Low input/output leakage characteristics
- Totally lead-free and fully RoHS compliant
Applications
- Battery Charging
- Power Management Functions
- DC-DC Converters
- Portable Power Adaptors
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the 10,000-unit tape and reel packaging configuration. Confirm that the component meets the required environmental standards, including being halogen and antimony free. Ensure the supplier provides documentation verifying compliance with JEDEC standards for high reliability applications.
Selection Notes
Select this component when a dual P-channel MOSFET is required for compact designs. The U-DFN2020-6 package offers a small footprint suitable for space-constrained portable electronics. Evaluate thermal dissipation requirements against the specified junction-to-ambient resistance values under different mounting conditions.
Part Context
This device belongs to Diodes Incorporated's line of dual P-channel enhancement mode MOSFETs. It utilizes a U-DFN2020-6 (Type B) case with nickel-palladium-gold annealed terminals over a copper leadframe. The product is designed to minimize on-state resistance while maintaining superior switching performance.
Replacement Considerations
For automotive applications requiring specific change control, refer to the related automotive grade parts with the Q-suffix. These components are qualified to AEC-Q100/101/200 standards and are manufactured in IATF 16949 certified facilities.
FAQ
What is the maximum continuous drain current?
The maximum continuous drain current is -4.5A at an ambient temperature of +25°C.
Is the device suitable for high-reliability applications?
Yes, the part is qualified to JEDEC standards as references in AEC-Q for high reliability.
What is the typical total gate charge?
The typical total gate charge is 9.1nC at VGS = -4.5V, VDS = -4V, and ID = -3.5A.
