DMP2065UFDB-7

DMP2065UFDB-7

$0.64
  • Description:MOSFET 2P-CH 20V 4.5A 6UDFN
  • Series:-

SKU:4eb2c9a60560 Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET 2P-CH 20V 4.5A 6UDFN
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 P-Channel (Dual)
  • FET Feature:-
  • Drain to Source Voltage (Vdss):20V
  • Current - Continuous Drain (Id) @ 25°C:4.5A (Ta)
  • Rds On (Max) @ Id, Vgs:50mOhm @ 2A, 4.5V
  • Vgs(th) (Max) @ Id:1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:9.1nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds:752pF @ 15V
  • Power - Max:1.54W
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:6-UDFN Exposed Pad
  • Supplier Device Package:U-DFN2020-6 (Type B)
  • Grade:-
  • Qualification:-

Download product information

DMP2065UFDB-7

Overview

The DMP2065UFDB-7 is a dual P-channel enhancement mode MOSFET in a U-DFN2020-6 package. It features a drain-source voltage of -20V and a maximum continuous drain current of -4.5A at +25°C. The on-state resistance is 50mΩ max at VGS = -4.5V, rising to 100mΩ max at VGS = -2.5V. Total gate charge is typically 9.1nC. Operating temperature ranges from -55°C to +150°C.

Feature Summary

  • Minimized on-state resistance combined with superior switching performance for high efficiency power management.
  • Low input capacitance and fast switching speed characteristics.
  • Low input and output leakage currents.
  • Qualified to JEDEC standards for high reliability applications.

Applications

  • Battery Charging
  • Power Management Functions
  • DC-DC Converters
  • Portable Power Adaptors

Procurement Notes

Verify the specific ordering suffix against official Diodes Incorporated documentation to confirm packaging quantity and reel specifications. Confirm that the component meets RoHS compliance and halogen-free requirements as defined by the manufacturer's quality definitions. Ensure the application environment aligns with the specified thermal and electrical ratings provided in the datasheet.

Selection Notes

Select this component for designs requiring low conduction losses in dual-channel P-channel configurations. Evaluate the thermal resistance values based on the intended PCB copper area and mounting conditions. Consider the gate threshold voltage variations across temperature when designing drive circuits to ensure reliable switching under all operating conditions.

Part Context

This device belongs to the DMP2065UFDB series of dual P-channel enhancement mode MOSFETs manufactured by Diodes Incorporated. It utilizes a U-DFN2020-6 surface mount case type designed for compact board layouts. The product line emphasizes minimizing on-resistance while maintaining robust switching capabilities for portable electronics.

Replacement Considerations

For automotive applications requiring specific change control or AEC-Q qualification, refer to the related automotive grade parts with the Q-suffix listed in the manufacturer's automotive products catalog.

FAQ

What is the maximum continuous drain current rating?

The maximum continuous drain current is -4.5A at an ambient temperature of +25°C.

Is this component suitable for automotive use?

Standard versions are qualified to JEDEC standards. For automotive applications requiring AEC-Q100/101/200 qualification and PPAP capability, the related automotive grade (Q-suffix) parts must be used.

What is the typical total gate charge?

The typical total gate charge is 9.1nC, measured at VGS = -4.5V, VDS = -4V, and ID = -3.5A.

DMP2065UFDB-7DMP2065UFDB-7
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