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The DMP2065UFDB-7 is a dual P-channel enhancement mode MOSFET in a U-DFN2020-6 package. It features a drain-source voltage of -20V and a maximum continuous drain current of -4.5A at +25°C. The on-state resistance is 50mΩ max at VGS = -4.5V, rising to 100mΩ max at VGS = -2.5V. Total gate charge is typically 9.1nC. Operating temperature ranges from -55°C to +150°C.
Verify the specific ordering suffix against official Diodes Incorporated documentation to confirm packaging quantity and reel specifications. Confirm that the component meets RoHS compliance and halogen-free requirements as defined by the manufacturer's quality definitions. Ensure the application environment aligns with the specified thermal and electrical ratings provided in the datasheet.
Select this component for designs requiring low conduction losses in dual-channel P-channel configurations. Evaluate the thermal resistance values based on the intended PCB copper area and mounting conditions. Consider the gate threshold voltage variations across temperature when designing drive circuits to ensure reliable switching under all operating conditions.
This device belongs to the DMP2065UFDB series of dual P-channel enhancement mode MOSFETs manufactured by Diodes Incorporated. It utilizes a U-DFN2020-6 surface mount case type designed for compact board layouts. The product line emphasizes minimizing on-resistance while maintaining robust switching capabilities for portable electronics.
For automotive applications requiring specific change control or AEC-Q qualification, refer to the related automotive grade parts with the Q-suffix listed in the manufacturer's automotive products catalog.
The maximum continuous drain current is -4.5A at an ambient temperature of +25°C.
Standard versions are qualified to JEDEC standards. For automotive applications requiring AEC-Q100/101/200 qualification and PPAP capability, the related automotive grade (Q-suffix) parts must be used.
The typical total gate charge is 9.1nC, measured at VGS = -4.5V, VDS = -4V, and ID = -3.5A.