DMP2066LSD-13

$0.58

Description：MOSFET 2P-CH 20V 5.8A 8SO
Series：-

SKU:3e1b3c3229b7 Category: FET, MOSFET Arrays Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET 2P-CH 20V 5.8A 8SO
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 P-Channel (Dual)
FET Feature：Logic Level Gate
Drain to Source Voltage (Vdss)：20V
Current - Continuous Drain (Id) @ 25°C：5.8A
Rds On (Max) @ Id, Vgs：40mOhm @ 4.6A, 4.5V
Vgs(th) (Max) @ Id：1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：10.1nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds：820pF @ 15V
Power - Max：2W
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-SOIC (0.154", 3.90mm Width)
Supplier Device Package：8-SO
Grade：-
Qualification：-

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DMP2066LSD-13

Overview

The DMP2066LSD-13 is a dual P-channel enhancement mode MOSFET in an SO-8 package. It features a drain-source voltage of -20V and a continuous drain current of -5.8A at +25°C. The maximum on-resistance is 40mΩ at VGS = -4.5V and 70mΩ at VGS = -2.5V. Total power dissipation is 2.0W with a thermal resistance of 62.5°C/W. Operating temperature ranges from -55°C to +150°C.

Feature Summary

Dual P-channel configuration for space-efficient designs
Low on-resistance for high efficiency
Fast switching speed capabilities
Qualified to AEC-Q101 standards

Applications

Backlighting circuits
Power management functions
DC-DC converters

Procurement Notes

Verify the component status before procurement as the datasheet explicitly states it is not recommended for new design. Confirm the specific ordering suffix matches the required tape and reel packaging quantity. Ensure compliance with RoHS and halogen-free requirements if applicable to your manufacturing process.

Selection Notes

Select this component only for legacy or existing designs where the specific electrical characteristics match the circuit requirements. Evaluate the thermal performance under actual load conditions, considering the 62.5°C/W junction-to-ambient resistance. Compare against newer alternatives if starting a fresh design due to the manufacturer's recommendation.

Part Context

This device belongs to Diodes Incorporated's generation of low RDS(ON) MOSFETs designed for power management applications. It utilizes silicon technology within a molded plastic SO-8 case. The product line emphasizes minimizing on-state resistance while maintaining superior switching performance for efficient power conversion.