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The DMP2066LVT-13 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage of -20V and a continuous drain current of -4.5A at +25°C. The device exhibits a maximum on-resistance of 45mΩ at VGS = -4.5V and 65mΩ at VGS = -2.5V. Total gate charge is typically 14.4nC. It operates within a junction temperature range of -55°C to +150°C and is housed in an SOT26 package.
Verify the specific ordering suffix '-13' corresponds to the 10,000-unit tape and reel packaging configuration as defined in the manufacturer's documentation. Confirm that the component meets all applicable environmental compliance requirements, including RoHS and halogen-free specifications, prior to final procurement authorization.
Select this component when a P-channel MOSFET with a -20V rating and low on-resistance is required for general-purpose switching or power management tasks. Ensure the application voltage and current levels remain within the specified absolute maximum ratings to maintain device integrity and operational safety.
This part belongs to the DMP2066 series of P-channel enhancement mode MOSFETs produced by Diodes Incorporated. The series is engineered to provide low on-state resistance combined with efficient switching capabilities, making it suitable for various power management and interfacing applications requiring reliable semiconductor switching solutions.
DMP2066LVT-7
The maximum continuous drain current is -4.5A at an ambient temperature of +25°C.
Yes, the device is qualified to AEC-Q101 standards for high reliability.