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Product Detailed Parameters
- Description：MOSFET P-CH 20V 4.2A TSOT26
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：20 V
- Current - Continuous Drain (Id) @ 25°C：4.2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：2.5V, 4.5V
- Rds On (Max) @ Id, Vgs：45mOhm @ 4.5A, 4.5V
- Vgs(th) (Max) @ Id：1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：28 nC @ 8 V
- Vgs (Max)：±8V
- Input Capacitance (Ciss) (Max) @ Vds：1575 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：1.2W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TSOT-26
- Package / Case：SOT-23-6 Thin, TSOT-23-6
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Overview
The DMP2067LVT-13 is a P-channel enhancement mode MOSFET from Diodes Incorporated, housed in a TSOT26 surface-mount package. It features a drain-source voltage (BVDSS) of -20V and a continuous drain current (ID) of -4.2A at +25°C. The device offers low on-state resistance, specified as 45mΩ maximum at VGS = -4.5V and 65mΩ at VGS = -2.5V. Total gate charge is typically 15nC at VGS = -4.5V. Operating temperature ranges from -55°C to +150°C.
Feature Summary
- Low on-resistance for high-efficiency power management
- Low gate threshold voltage for improved switching performance
- Low input capacitance to support fast switching speeds
Applications
- General purpose interfacing switch
- Power management functions
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the 10,000-unit tape and reel packaging configuration. Confirm that the component meets RoHS 2/3 compliance and is halogen-free. Ensure the application environment remains within the specified thermal limits and voltage ratings defined in the datasheet.
Selection Notes
Select this component when a compact P-channel MOSFET with low RDS(ON) is required for space-constrained designs. The TSOT26 package provides a small footprint suitable for dense PCB layouts. Consider the -20V rating and 4.2A current capability against the specific load requirements of the target circuit.
Part Context
This part belongs to the DMP2067 series of advanced P-channel MOSFETs designed by Diodes Incorporated. The series focuses on minimizing on-state resistance while maintaining superior switching characteristics. The LVT designation indicates a low gate threshold voltage variant optimized for lower drive voltages.
Replacement Considerations
Check for compatible parts within the same DMP2067 family or other TSOT26 packaged P-channel MOSFETs with matching voltage and current ratings. Verify pinout compatibility and electrical parameters before substitution.
