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Product Detailed Parameters
- Description：MOSFET BVDSS: 8V~24V TSOT26 T&R
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：20 V
- Current - Continuous Drain (Id) @ 25°C：4.2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：2.5V, 4.5V
- Rds On (Max) @ Id, Vgs：45mOhm @ 4.5A, 4.5V
- Vgs(th) (Max) @ Id：1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：28 nC @ 8 V
- Vgs (Max)：±8V
- Input Capacitance (Ciss) (Max) @ Vds：1575 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：1.2W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：TSOT-26
- Package / Case：SOT-23-6 Thin, TSOT-23-6
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Overview
The DMP2067LVTQ-13 is a P-channel enhancement mode MOSFET designed for automotive applications. It features a -20V drain-source voltage and a maximum continuous drain current of -4.2A at +25°C. The device offers low on-resistance, specified as 45mΩ max at VGS = -4.5V and 65mΩ max at VGS = -2.5V. Packaged in a TSOT26 surface-mount housing with six pins, it operates within a temperature range of -55°C to +150°C. Total power dissipation is rated at 1.2W under standard conditions.
Feature Summary
- Qualified to AEC-Q101 standards for high reliability
- Low gate threshold voltage for efficient switching
- Low input capacitance for reduced switching losses
- Manufactured in IATF 16949 certified facilities
Applications
- General-purpose interfacing switches
- Power-management functions
- Automotive electronic systems requiring specific change control
Procurement Notes
Verify the complete part number including the suffix '-13' to confirm the 10,000-unit tape and reel packaging configuration. Ensure that the procurement channel is authorized by Diodes Incorporated to guarantee product authenticity and compliance with the IATF 16949 manufacturing standards required for automotive qualification.
Selection Notes
Select this component when designing circuits requiring a robust P-channel switch with low on-resistance at both standard and lower gate drive voltages. The TSOT26 package provides a compact footprint suitable for space-constrained PCB layouts. Consider the thermal resistance characteristics and ensure adequate copper area on the substrate to maintain junction temperatures within the specified operating limits during continuous operation.
Part Context
This component belongs to the DMP2067 series of P-channel MOSFETs from Diodes Incorporated. The 'LVT' designation indicates a low gate threshold voltage variant optimized for lower drive signals. The 'Q' suffix signifies automotive qualification, while '-13' denotes the specific 10,000-piece tape and reel packaging format used for high-volume production lines.
Replacement Considerations
Consult official documentation for verified substitutes such as the DMP2067LVTQ-7, which shares identical electrical specifications but utilizes a 3,000-unit tape and reel packaging format. Cross-referencing other family members requires confirming matching voltage ratings, current capabilities, and package dimensions.
