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Product Detailed Parameters
- Description：MOSFET BVDSS: 8V~24V SOT23 T&R 3
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：20 V
- Current - Continuous Drain (Id) @ 25°C：4.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
- Rds On (Max) @ Id, Vgs：44mOhm @ 2A, 4.5V
- Vgs(th) (Max) @ Id：950mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：8.2 nC @ 10 V
- Vgs (Max)：±8V
- Input Capacitance (Ciss) (Max) @ Vds：118 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：830mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-23-3
- Package / Case：TO-236-3, SC-59, SOT-23-3
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Overview
The DMP2070U-7 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated in an SOT-23 package. It features a drain-source voltage (Vdss) of -20V and a continuous drain current (Id) of -4.6A at +25°C case temperature. The device exhibits low on-resistance, with maximum values of 44mΩ at Vgs=-4.5V, 57mΩ at Vgs=-2.5V, and 74mΩ at Vgs=-1.8V. Total gate charge is 8.2nC at Vgs=-8V and 17.8nC at Vgs=-4.5V. Operating junction temperature ranges from -55°C to +150°C.
Feature Summary
- Low on-state resistance across multiple gate drive voltages for high-efficiency power management
- Fast switching speed combined with low input capacitance
- ESD protected gate structure
- Totally lead-free and fully RoHS compliant
Applications
- Load switch applications
- High-efficiency power management circuits
Procurement Notes
Verify the specific ordering suffix matches the required packaging quantity. Confirm that the component meets all applicable automotive quality standards if intended for such environments, as standard versions may differ from AEC-Q100 qualified parts. Ensure thermal design accounts for the specified junction-to-ambient resistance values under actual board layout conditions.
Selection Notes
Select this component when a compact P-channel solution is required for low-voltage load switching. Evaluate the on-resistance requirements against available gate drive voltages, as Rds(on) varies significantly between 1.8V, 2.5V, and 4.5V drives. Consider the thermal dissipation capabilities relative to the expected continuous current and ambient operating temperature.
Part Context
This part belongs to the DMP2070U series of P-channel MOSFETs designed by Diodes Incorporated. It utilizes a standard SOT-23 surface-mount case material made from molded plastic with a matte tin finish over a copper leadframe. The device is classified as a green product, being halogen and antimony free.
Replacement Considerations
Check datasheets for alternative P-channel MOSFETs with compatible -20V ratings and similar Rds(on) specifications. Verify pinout compatibility for Drain, Source, and Gate configurations before substitution.
FAQ
What is the maximum gate-source voltage rating?
The maximum continuous gate-source voltage (VGSS) is rated at ±8V.
Is the device suitable for automotive applications?
Standard versions are not explicitly qualified to AEC-Q100/101/200. Automotive-specific variants requiring change control and IATF 16949 manufacturing must be requested directly from the manufacturer.
