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Product Detailed Parameters
- Description：MOSFET 2P-CH 20V 3.8A 6UDFN
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 P-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：3.8A (Ta)
- Rds On (Max) @ Id, Vgs：75mOhm @ 2.9A, 4.5V
- Vgs(th) (Max) @ Id：1.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：8.8nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：642pF @ 10V
- Power - Max：700mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-UDFN Exposed Pad
- Supplier Device Package：U-DFN2020-6 (Type B)
- Grade：-
- Qualification：-
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Overview
The DMP2075UFDB-13 is a dual P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a U-DFN2020-6 package with a maximum height of 0.6mm. The device provides a drain-source voltage (V_DSS) of -20V and a continuous drain current (I_D) of -3.8A at +25°C. The typical on-resistance (R_DS(ON)) is 53mΩ at V_GS = -4.5V, rising to 137mΩ at V_GS = -2.5V. Total gate charge is 8.8nC at V_GS = -4.5V. Operating temperature ranges from -55°C to +150°C.
Feature Summary
- Dual P-channel configuration in a low-profile surface-mount package
- Optimized for low on-state resistance and high efficiency power management
- ESD protected gate structure
- Totally lead-free and fully RoHS compliant
Applications
- Load Switch
- Power Management Functions
- Portable Power Adaptors
Procurement Notes
Verify the ordering suffix '-13' corresponds to the 10,000-unit tape and reel packaging format specified in the official datasheet. Confirm that the component meets specific automotive requirements such as AEC-Q100 qualification or PPAP capability only if explicitly requested through authorized Diodes representatives, as standard production may not include these certifications.
Selection Notes
Select this component for applications requiring compact dual P-channel switching solutions. The U-DFN2020-6 package offers a small footprint suitable for space-constrained designs. Ensure the driving circuit can provide sufficient gate-source voltage to achieve the minimum on-resistance specifications for optimal thermal performance.
Part Context
This part belongs to the DMP2075 series of advanced dual P-channel MOSFETs designed by Diodes Incorporated. The series focuses on minimizing on-state resistance while maintaining superior switching performance. The product utilizes a molded plastic case with a green molding compound classification.
Replacement Considerations
Consult the manufacturer's documentation for verified substitute part numbers. Cross-referencing requires matching electrical parameters including voltage ratings, current capabilities, and package dimensions.
FAQ
What is the maximum continuous drain current rating?
The maximum continuous drain current is -3.8A at an ambient temperature of +25°C.
Does the device support avalanche energy conditions?
Yes, the datasheet specifies an avalanche energy rating of 8.5mJ with an inductance of 0.1mH.
What is the body diode reverse recovery time?
The typical body diode reverse recovery time is 13ns when sourced at -3.0A with a dI/dt of 100A/μs.
