DMP2075UVT-7

$0.08

Description：MOSFET P-CH 20V 3.8A TSOT26 T&R
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:189776234bcf Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET P-CH 20V 3.8A TSOT26 T&R
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：20 V
Current - Continuous Drain (Id) @ 25°C：3.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：2.5V, 4.5V
Rds On (Max) @ Id, Vgs：75mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：8.8 nC @ 4.5 V
Vgs (Max)：±8V
Input Capacitance (Ciss) (Max) @ Vds：642 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：1.2W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TSOT-26
Package / Case：SOT-23-6 Thin, TSOT-23-6

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DMP2075UVT-7

Overview

The DMP2075UVT-7 is a dual P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a TSOT26 package with a maximum drain-source voltage (BVDSS) of -20V and a continuous drain current (ID) of -3.8A at +25°C. The device exhibits a maximum on-resistance (RDS(ON)) of 75mΩ at VGS = -4.5V and 137mΩ at VGS = -2.5V. Total power dissipation is rated at 1.2W, with an operating temperature range from -55°C to +150°C.

Feature Summary

Dual channel configuration for integrated switching applications
Low on-state resistance optimized for high efficiency
ESD protected gate structure
Totally lead-free and fully RoHS compliant

Applications

General purpose interfacing switch
Power management functions

Procurement Notes

Verify the specific ordering suffix against manufacturer documentation to confirm packaging quantity and reel specifications. Confirm that the component meets all applicable environmental directives, including RoHS and REACH requirements, prior to integration into final assemblies.

Selection Notes

Select this component for designs requiring low on-resistance in a compact surface-mount form factor. Ensure the gate drive voltage aligns with the specified thresholds for optimal RDS(ON) performance. Evaluate thermal constraints based on the junction-to-ambient resistance provided in the datasheet.

Part Context

This part belongs to the DMP series of P-channel MOSFETs from Diodes Incorporated. It utilizes the TSOT26 case outline, which provides a small footprint suitable for space-constrained PCB layouts. The device is designed to minimize on-state resistance while maintaining superior switching performance.

Replacement Considerations

Consult official substitution lists or cross-reference tools provided by Diodes Incorporated for verified alternatives. Do not assume pin compatibility or electrical equivalence with other manufacturers' parts without explicit datasheet confirmation.