DMP2079LCA3-7

$0.09

Description：MOSFET P-CH 20V 3.4A X4DSN1006-3
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:f441c932f713 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET P-CH 20V 3.4A X4DSN1006-3
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：20 V
Current - Continuous Drain (Id) @ 25°C：3.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：1.8V, 8V
Rds On (Max) @ Id, Vgs：78mOhm @ 500mA, 8V
Vgs(th) (Max) @ Id：1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：1.1 nC @ 4.5 V
Vgs (Max)：-12V
Input Capacitance (Ciss) (Max) @ Vds：152 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：810mW
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：X4-DSN1006-3 (Type B)
Package / Case：3-XFDFN

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DMP2079LCA3-7

Overview

The DMP2079LCA3-7 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (BVDSS) of -20V and a continuous drain current (ID) of -3.4A at +25°C. The device offers low on-resistance, specified as 78mΩ max at VGS = -8V and 100mΩ max at VGS = -4.5V. It utilizes an X4-DSN1006-3 (Type B) surface-mount package with a low profile height of 0.225mm. Key electrical parameters include a gate threshold voltage (VGS(TH)) of -1.2V max and a total gate charge (Qg) of 1.1nC max.

Feature Summary

Designed to minimize footprint for handheld and mobile applications
Low gate charge (Qg) and gate-drain charge (Qgd)
Low profile construction with 0.225mm height
Totally lead-free and fully RoHS compliant

Applications

Battery Management
Load Switch
Battery Protection
Handheld and Mobile Application

Procurement Notes

Verify the specific ordering suffix '-7' corresponds to the 10k/Tape & Reel packaging configuration. Confirm compliance requirements such as Halogen and Antimony free status against project specifications. Ensure the X4-DSN1006-3 (Type B) package dimensions align with the target PCB layout constraints.

Selection Notes

Select this component for designs requiring a compact P-channel MOSFET solution. The low on-resistance supports efficient power switching in battery-powered devices. Verify that the -20V rating meets the system voltage requirements and that the thermal dissipation capabilities are sufficient for the intended operating conditions.

Part Context

This part belongs to the DMP2079 series of P-channel enhancement mode MOSFETs from Diodes Incorporated. It is engineered specifically to replace smaller signal MOSFETs while maintaining superior performance metrics. The product line emphasizes miniaturization without compromising electrical characteristics for portable electronics.