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Product Detailed Parameters
- Description：MOSFET P CH 20V 4.3A SOT23
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：20 V
- Current - Continuous Drain (Id) @ 25°C：4.3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：1.8V, 10V
- Rds On (Max) @ Id, Vgs：38mOhm @ 3.5A, 10V
- Vgs(th) (Max) @ Id：1.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：9.1 nC @ 4.5 V
- Vgs (Max)：±10V
- Input Capacitance (Ciss) (Max) @ Vds：216 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：800mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-23-3
- Package / Case：TO-236-3, SC-59, SOT-23-3
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Overview
The DMP2100U-7 is a P-channel enhancement mode MOSFET in an SOT-23 package. It features a drain-source voltage (V_DSS) of -20V and a continuous drain current (I_D) of -4.3A at +25°C. The on-resistance (R_DS(ON)) is specified as 38mΩ max at V_GS = -10V, 43mΩ max at V_GS = -4.5V, and 75mΩ max at V_GS = -2.5V. Total gate charge (Q_g) is 9.1nC max at V_GS = -4.5V. The device operates within a junction temperature range of -55°C to +150°C.
Feature Summary
- Low on-resistance for high efficiency power management
- Fast switching speed with low input capacitance
- ESD protected up to 3kV
- Qualified to AEC-Q101 standards
Applications
- Load Switch
- Power Management Functions
Procurement Notes
Verify the specific ordering suffix '-7' corresponds to the standard tape and reel packaging configuration. Confirm compliance requirements such as RoHS and halogen-free status if mandated by the project specifications. Ensure the component is suitable for new designs or verify if alternative recommendations apply based on manufacturer guidelines.
Selection Notes
Select this component for applications requiring a compact P-channel MOSFET with low on-state resistance. Consider the -20V rating and -4.3A current capability for load switching tasks. Evaluate thermal performance under steady-state conditions using the provided R_theta_JA values. Verify gate drive voltage compatibility with the specified R_DS(ON) thresholds.
Part Context
Manufactured by Diodes Incorporated, the DMP2100U is part of their discrete semiconductor portfolio. It utilizes a molded plastic case with matte tin annealed terminals. The device is designed to minimize on-state resistance while maintaining superior switching performance for efficient power management solutions.
Replacement Considerations
The datasheet explicitly states 'NOT RECOMMENDED FOR NEW DESIGN' and advises using DMP2045U instead. Verify if DMP2045U meets all electrical requirements before substitution.
