SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The DMP2101UCB9-7 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It utilizes X2-DFN1006-3 surface-mount packaging for compact circuit integration. The device features an 8V drain-source breakdown voltage and a continuous drain current of 4A. Key electrical parameters include a maximum on-resistance of 25 milliohms at a gate-source voltage of -4.5V, with a gate threshold voltage ranging from 0.4 to 1 volt. Thermal performance is defined by a power dissipation rating of 1.5 watts and an operating temperature range spanning from -55°C to +150°C.
Verify the specific ordering suffix against official Diodes Incorporated documentation to confirm package type and reel specifications. Ensure component authenticity through authorized distribution channels. Cross-reference datasheet revisions to confirm parameter consistency before finalizing procurement orders.
Select this component for designs requiring high current density in minimal board space. Evaluate thermal constraints carefully due to the small package size. Confirm that system voltage levels remain within the 8V breakdown limit during all operational states.
This part belongs to the DMP21 series of low-voltage P-channel MOSFETs designed for portable electronics. The series emphasizes miniaturization while maintaining robust current carrying capabilities suitable for modern mobile and wearable device architectures.
Consult official manufacturer substitution guides for verified equivalents. Do not assume pin compatibility with other packages without explicit datasheet confirmation.