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The DMP2101UCP9 is a dual P-channel enhancement mode MOSFET utilizing LD-MOS technology. It features a -20V drain-to-drain voltage rating and a typical on-resistance of 63mΩ at VGS = -4.5V. The device supports a continuous drain current of -3.1A at +25°C and operates within a temperature range of -55°C to +150°C. Packaged in an X2-DSN1515-9 footprint measuring 1.5mm x 1.5mm with a height of 0.32mm, it offers a total gate charge of 3.2nC for fast switching.
Verify the specific ordering suffix '-7' corresponds to the tape and reel packaging configuration containing 3000 units per carrier. Confirm that the component meets all applicable environmental directives, including RoHS 2, RoHS 3, and halogen-free requirements, as specified by the manufacturer's definitions for green devices.
Select this component when designing high-efficiency power-management circuits requiring a compact dual P-channel solution. The small X2-DSN1515-9 package is suitable for space-constrained layouts. Ensure the application logic accounts for the negative polarity inherent to P-channel devices and verify thermal dissipation capabilities against the junction-to-ambient resistance values provided in the datasheet.
This part belongs to the DMP series of dual P-channel enhancement mode MOSFETs manufactured by Diodes Incorporated. It represents a newer generation designed to minimize on-state losses while maintaining superior switching characteristics compared to previous iterations in the family.
No public confirmed substitute part numbers are available in the official documentation.