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Product Detailed Parameters
- Description：MOSFET P-CH 20V 200MA 3DFN
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：20 V
- Current - Continuous Drain (Id) @ 25°C：200mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：1.2V, 4.5V
- Rds On (Max) @ Id, Vgs：5Ohm @ 100mA, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±10V
- Input Capacitance (Ciss) (Max) @ Vds：175 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：350mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：X2-DFN1006-3
- Package / Case：3-XFDFN
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Overview
The DMP210DUFB4-7 is a dual P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features two independent channels within a single surface-mount package, designed for high-efficiency power switching applications. The device is characterized by low on-resistance and fast switching speeds, making it suitable for load switch and power management circuits where space constraints are critical.
Feature Summary
- Dual independent P-channel MOSFET configuration in a compact footprint
- Enhancement mode operation with logic-level gate drive compatibility
- Optimized for low conduction losses and efficient thermal performance
Applications
- Load switching in portable electronic devices
- Power distribution units in industrial equipment
- Battery protection circuits in consumer electronics
Procurement Notes
Verify the specific suffix 'FB4' against the manufacturer's current datasheet to confirm pinout and electrical tolerances. Ensure the ordering code matches the exact tape-and-reel quantity specified in the official documentation. Cross-reference the date code and lot traceability requirements with your supply chain standards before finalizing procurement.
Selection Notes
Select this component when a dual P-channel solution is required to save board space compared to discrete single MOSFETs. Evaluate the total on-resistance and gate charge parameters against your system's efficiency targets. Confirm that the package thermal resistance meets the ambient operating conditions of the intended application environment.
Part Context
This part belongs to Diodes Incorporated's portfolio of surface-mount power MOSFETs. The dual configuration allows for synchronized or independent control of two power rails. It is commonly used in systems requiring multiple power switches within a limited area, such as mobile phones and tablets.
Replacement Considerations
Check for direct substitutes like the DMP210DUFB4-13 if different reel packaging is needed. Verify pin-to-pin compatibility with other dual P-channel MOSFETs from alternative manufacturers only after confirming identical electrical specifications and package dimensions.
