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The DMP2110U-13 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated in an SOT23 surface-mount package. It features a drain-source voltage (V_DSS) of -20 V and a continuous drain current (I_D) of -3.5 A at +25°C. The maximum on-resistance (R_DS(ON)) is 80 mΩ at V_GS = -4.5 V and 110 mΩ at V_GS = -2.5 V. Total gate charge (Q_g) is 6.0 nC, with turn-on delay time of 4.0 ns and turn-off delay time of 24.5 ns. Operating temperature range spans from -55°C to +150°C.
Verify the specific ordering suffix '-13' corresponds to the 10,000-unit tape and reel packaging configuration. Confirm that the component meets the required UL flammability classification rating of 94V-0 and moisture sensitivity level 1 per J-STD-020 standards for your assembly process.
Select this component when a low-profile SOT23 package is required for space-constrained designs. Ensure the application operates within the specified -20 V drain-source voltage limit and requires fast switching characteristics suitable for DC-DC converters or motor control circuits.
This part belongs to the DMP2110U series of P-channel enhancement mode MOSFETs. It utilizes a molded plastic case with matte tin annealed terminals over a copper leadframe. The device is designed for general-purpose switching applications requiring low static and dynamic losses.
DMP2110U-7
The maximum continuous body diode forward current (I_S) is -1.5 A.
The steady-state thermal resistance, junction to ambient (R_θJA), is 158 °C/W when mounted on an FR-4 substrate PC board with minimum recommended pad layout.