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Product Detailed Parameters
- Description：MOSFET 2P-CH 20V 3.2A 6UDFN
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 P-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：3.2A (Ta)
- Rds On (Max) @ Id, Vgs：75mOhm @ 2.8A, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：12.7nC @ 8V
- Input Capacitance (Ciss) (Max) @ Vds：443pF @ 10V
- Power - Max：820mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-UDFN Exposed Pad
- Supplier Device Package：U-DFN2020-6 (Type B)
- Grade：-
- Qualification：-
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Overview
The DMP2110UFDB-7 is a dual P-channel enhancement mode MOSFET in a U-DFN2020-6 package. It features a -20V drain-source voltage and a maximum continuous drain current of -3.2A at +25°C. The on-resistance is specified as 75mΩ at VGS=-4.5V and 110mΩ at VGS=-2.5V. Total gate charge is 6.0nC at VGS=-4.5V. Operating temperature ranges from -55°C to +150°C.
Feature Summary
- Dual configuration within a compact 4mm² PCB footprint
- Optimized for low on-state resistance and superior switching performance
- Low profile construction with a maximum height of 0.6mm
- Lead-free, RoHS compliant, and halogen/antimony free
Applications
- Load switches
- Power management functions
- Portable power adaptors
Procurement Notes
Verify the specific ordering suffix against official Diodes Incorporated documentation to confirm packaging quantity and carrier type. Confirm that the component meets all applicable environmental directives and flammability ratings required for the intended assembly process before finalizing procurement.
Selection Notes
Select this component when a dual P-channel solution is required in a minimal surface area. Evaluate thermal dissipation capabilities based on the specific copper plane layout and ambient operating conditions. Ensure the gate drive voltage aligns with the specified thresholds for optimal on-resistance performance.
Part Context
This device belongs to the DMP series of dual P-channel enhancement mode MOSFETs manufactured by Diodes Incorporated. It utilizes a U-DFN2020-6 (Type B) package designed for high-density surface mount applications. The product line emphasizes minimizing on-state resistance while maintaining efficient switching characteristics.
Replacement Considerations
An automotive-compliant version of this part is available under the separate datasheet designation DMP2110UFDBQ.
FAQ
What is the maximum height of the DMP2110UFDB-7 package?
The maximum height of the U-DFN2020-6 package is 0.6mm.
Is the DMP2110UFDB-7 suitable for lead-free soldering processes?
Yes, the device is totally lead-free and fully RoHS compliant.
What is the typical total gate charge at VGS = -4.5V?
The typical total gate charge is 6.0nC at VGS = -4.5V and ID = -3.0A.
