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Product Detailed Parameters
- Description：MOSFET 2P-CH 20V 1.8A TSOT26
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 P-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：1.8A (Ta)
- Rds On (Max) @ Id, Vgs：150mOhm @ 2.8A, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：6nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：443pF @ 6V
- Power - Max：740mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-23-6 Thin, TSOT-23-6
- Supplier Device Package：TSOT-26
- Grade：-
- Qualification：-
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Overview
The DMP2110UVT-13 is a dual P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a TSOT26 package and operates with a drain-source voltage of -20V. The device provides a maximum on-resistance of 150mΩ at VGS=-4.5V, supporting a continuous drain current of -1.8A at +25°C. Total gate charge is 6.0nC, with input capacitance of 443pF. Operating temperature ranges from -55°C to +150°C.
Feature Summary
- Dual P-channel configuration for high-efficiency power management
- Minimized on-state resistance while maintaining superior switching performance
- Low gate threshold voltage and low input capacitance
Applications
- General purpose interfacing switch
- Power management functions
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the 10,000-unit tape and reel packaging format as defined in the manufacturer's documentation. Confirm that the component meets RoHS 3 compliance standards and ensure the TSOT26 package dimensions align with the target PCB layout requirements before finalizing procurement.
Selection Notes
Select this component when a compact dual P-channel solution is required for general-purpose switching or power management applications. The TSOT26 package offers space efficiency, while the specified electrical characteristics support efficient operation in low-voltage environments requiring moderate current handling capabilities.
Part Context
This part belongs to the DMP2110UVT series of dual P-channel enhancement mode MOSFETs. It is designed to minimize on-state resistance while maintaining superior switching performance. The device is intended for high-efficiency power management applications where compact size and low power loss are critical design parameters.
Replacement Considerations
The DMP2110UVT-7 serves as an alternative packaging option within the same product family, offering identical electrical specifications but packaged in 3,000-unit tape and reels instead of 10,000-unit reels.
