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Product Detailed Parameters
- Description：MOSFET 2P-CH 20V 1.8A TSOT26
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 P-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：1.8A (Ta)
- Rds On (Max) @ Id, Vgs：150mOhm @ 2.8A, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：6nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：443pF @ 6V
- Power - Max：740mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-23-6 Thin, TSOT-23-6
- Supplier Device Package：TSOT-26
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The DMP2110UVTQ is a dual P-channel enhancement mode MOSFET in a TSOT26 package. It features a -20V drain-source breakdown voltage and low on-resistance of 150mΩ at VGS=-4.5V, supporting continuous drain currents up to -1.8A at +25°C. The device operates within a junction temperature range of -55°C to +150°C and includes an integrated body diode with a forward voltage of -1.0V at -1A. Designed for high-efficiency power management, it offers fast switching speeds and low input capacitance.
Feature Summary
- Dual P-channel configuration providing two independent switches in a compact footprint
- Optimized for high-efficiency power management through minimized on-state resistance
- Automotive-grade qualification ensuring reliability under specific change control requirements
- Low gate threshold voltage enabling efficient drive from standard logic levels
Applications
- General purpose interfacing switch applications
- Power management functions in electronic circuits
- Automotive electronics requiring AEC-Q101 qualified components
Procurement Notes
Verify the ordering suffix matches the required packaging quantity; '-7' indicates tape and reel packaging with 3000 units per reel. Confirm that the component meets RoHS compliance standards and is halogen-free if environmental regulations apply to your assembly process. Ensure the manufacturing facility holds IATF 16949 certification for automotive supply chain requirements.
Selection Notes
Select this component when a dual P-channel solution is required in a small surface-mount package. Evaluate the thermal resistance characteristics against your board layout copper area to ensure adequate heat dissipation. Consider the gate threshold voltage specifications to guarantee compatibility with your system's available drive voltages.
Part Context
This part belongs to Diodes Incorporated's generation of MOSFETs designed to balance low on-resistance with superior switching performance. It is specifically engineered for applications demanding high efficiency in power management systems while maintaining a compact physical profile suitable for dense circuit board layouts.
Replacement Considerations
Check datasheets for alternative dual P-channel MOSFETs in TSOT26 packages with comparable -20V ratings and similar on-resistance values. Verify pinout compatibility and thermal characteristics before substitution.
FAQ
Is the DMP2110UVTQ suitable for automotive applications?
Yes, the component is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities, making it suitable for automotive applications requiring specific change control.
What is the maximum pulsed drain current capability?
The device supports a pulsed drain current of -15A with a 10μs pulse duration and a duty cycle of 1%.
How does the on-resistance vary with temperature?
The on-resistance increases as the junction temperature rises. Graphs in the datasheet illustrate this variation across temperatures ranging from -55°C to +150°C.
