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Product Detailed Parameters
- Description：MOSFET P-CH 20V 3.4A SOT-26
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：20 V
- Current - Continuous Drain (Id) @ 25°C：3.4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：2.5V, 4.5V
- Rds On (Max) @ Id, Vgs：80mOhm @ 4.5A, 4.5V
- Vgs(th) (Max) @ Id：1.25V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：7.3 nC @ 4.5 V
- Vgs (Max)：±12V
- Input Capacitance (Ciss) (Max) @ Vds：443 pF @ 16 V
- FET Feature：-
- Power Dissipation (Max)：1.25W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-26
- Package / Case：SOT-23-6
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Overview
The DMP2130LDM-7 is a P-channel enhancement mode field effect transistor manufactured by Diodes Incorporated. It features a SOT-26 surface-mount package and operates with a drain-source voltage of -20 V and a continuous drain current of -3.4 A at 25°C. The device exhibits a low on-state resistance of 80 mΩ at VGS = -4.5V. Total power dissipation is rated at 1.25 W, with an operating temperature range from -55°C to +150°C. Gate-source voltage limits are ±12 V.
Feature Summary
- Low on-state resistance for efficient switching performance
- Qualified to AEC-Q101 standards for high reliability applications
- RoHS compliant and lead-free design
Applications
- Power management circuits
- Battery protection systems
- Load switch applications
Procurement Notes
Verify the specific ordering suffix matches the required packaging configuration. Confirm that the component meets RoHS compliance requirements for your assembly process. Ensure the SOT-26 footprint aligns with your PCB layout specifications. Check for any recent product change notices regarding material or manufacturing site updates.
Selection Notes
Select this component when a compact P-channel MOSFET with low RDS(ON) is required in a SOT-26 package. Consider the -20 V rating and -3.4 A current capability for suitable load conditions. Evaluate thermal resistance and power dissipation limits relative to your ambient temperature environment.
Part Context
This part belongs to the DMP2130LDM series of P-channel enhancement mode MOSFETs. It is designed for general-purpose switching applications requiring small form factors. The device utilizes silicon technology and is intended for use in consumer electronics and industrial control systems where space efficiency is critical.
Replacement Considerations
Direct substitutes include other P-channel MOSFETs in SOT-26 packages with comparable voltage and current ratings. Verify pinout compatibility and electrical parameters such as RDS(ON) and threshold voltage before substitution.
