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Product Detailed Parameters
- Description：MOSFET 2P-CH 20V 3.8A 6UDFN
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 P-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：3.8A
- Rds On (Max) @ Id, Vgs：70mOhm @ 2.8A, 4.5V
- Vgs(th) (Max) @ Id：900mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：6.5nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：536pF @ 10V
- Power - Max：1.4W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-UDFN Exposed Pad
- Supplier Device Package：U-DFN2020-6 (Type B)
- Grade：-
- Qualification：-
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Overview
The DMP2160UFDBQ is a dual P-channel enhancement mode MOSFET designed for high-efficiency power management. It features a -20V drain-source voltage and a maximum continuous drain current of -3.8A at +25°C. The device offers low on-state resistance, specified as 70mΩ max at VGS = -4.5V and 85mΩ max at VGS = -2.5V. Packaged in a U-DFN2020-6 (Type B) footprint with a maximum height of 0.5mm, it supports automotive applications through AEC-Q101 qualification and IATF 16949 manufacturing.
Feature Summary
- Dual independent P-channel MOSFET configuration within a single package
- Low on-state resistance optimized for high efficiency power management
- Fast switching speed combined with low input/output leakage currents
- Automotive grade reliability with AEC-Q101 qualification and PPAP capability
Applications
- Load switches
- Power management functions
- Portable power adaptors
Procurement Notes
Verify the specific ordering suffix to confirm packaging quantity and carrier type. Confirm that the component meets RoHS 3 and Halogen-free requirements if mandated by project specifications. Ensure the design accommodates the U-DFN2020-6 thermal pad layout for optimal heat dissipation. Check for any recent datasheet revisions that may impact pinout or electrical characteristics before finalizing procurement.
Selection Notes
Select this component when a compact dual P-channel solution is required for space-constrained designs. The low gate threshold voltage facilitates logic-level driving from various control sources. Consider the thermal resistance and PCB copper area requirements to maintain junction temperature within safe operating limits under continuous load conditions.
Part Context
This part belongs to Diodes Incorporated's discrete semiconductor portfolio, specifically within the MOSFET array category. It serves as a replacement for older single-channel or larger package solutions where board space is limited. The U-DFN2020-6 package provides a low-profile alternative to traditional SOT or SOIC packages while maintaining robust thermal performance.
Replacement Considerations
The datasheet explicitly recommends using the DMP2110UFDBQ as a replacement for new designs. Verify compatibility regarding pinout, electrical ratings, and package dimensions before substituting.
