DMP2165UW-13

$0.32

Description：MOSFET P-CH 20V 2.5A SOT323 T&R
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:3889037cacf1 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET P-CH 20V 2.5A SOT323 T&R
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：20 V
Current - Continuous Drain (Id) @ 25°C：2.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
Rds On (Max) @ Id, Vgs：90mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：3.5 nC @ 4.5 V
Vgs (Max)：±12V
Input Capacitance (Ciss) (Max) @ Vds：335 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：500mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOT-323
Package / Case：SC-70, SOT-323

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DMP2165UW-13

Overview

The DMP2165UW-13 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated in an SOT323 surface-mount package. It features a drain-source voltage (BVDSS) of -20V and a maximum continuous drain current (ID) of -2.5A at +25°C, reducing to -2.0A at +70°C. The device exhibits a low on-resistance (RDS(ON)) of 90mΩ at VGS = -4.5V and 120mΩ at VGS = -2.5V. Key electrical parameters include a gate threshold voltage (VGS(TH)) ranging from -0.4V to -1.0V, input capacitance (Ciss) of 335pF, and total gate charge (Qg) of 3.5nC. Thermal characteristics specify a junction-to-ambient thermal resistance (RθJA) of 259°C/W on a standard FR-4 PCB.

Feature Summary

Designed for high efficiency power management applications with minimized on-state resistance while maintaining superior switching performance.
Features low input capacitance and fast switching speed suitable for dynamic load control.
Compliant with RoHS directives and free from halogen and antimony compounds.

Applications

Motor Control
Power Management Functions
Backlighting

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 10,000-unit tape and reel packaging configuration as defined in the manufacturer's documentation. Confirm that the component meets the required environmental standards, specifically EU RoHS 2/3 compliance and Halogen/Antimony-free status, prior to integration into the final assembly process.

Selection Notes

Select this component when a compact SOT323 footprint is required for low-voltage (-20V) P-channel switching. Ensure the application gate drive voltage supports the specified RDS(ON) thresholds, particularly noting the higher resistance at lower VGS levels (-2.5V). Evaluate thermal dissipation requirements against the 0.5W power rating on standard PCB layouts.

Part Context

This part belongs to the DMP2165UW series of P-channel enhancement mode MOSFETs produced by Diodes Incorporated. The series is engineered to balance low conduction losses with rapid switching capabilities, targeting space-constrained portable electronics and battery-powered systems where efficient power distribution is critical.

Replacement Considerations

Consult the official datasheet for cross-reference recommendations. Verify pinout compatibility (Source, Gate, Drain) and ensure substitute components meet or exceed the -20V breakdown voltage and -2.5A current handling specifications.