DMP21D0UFB-7B

$0.32

Description：MOSFET BVDSS: 8V~24V X1-DFN1006-
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:5079cbae5c85 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 8V~24V X1-DFN1006-
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：20 V
Current - Continuous Drain (Id) @ 25°C：770mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
Rds On (Max) @ Id, Vgs：495mOhm @ 400mA, 4.5V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：1.5 nC @ 8 V
Vgs (Max)：±8V
Input Capacitance (Ciss) (Max) @ Vds：76.5 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：430mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：X1-DFN1006-3
Package / Case：3-UFDFN

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DMP21D0UFB-7B

Overview

The DMP21D0UFB-7B is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a -20V drain-source breakdown voltage and an X1-DFN1006-3 surface-mount package. The device provides a maximum continuous drain current of -0.77A at +25°C with a typical on-resistance of 495mΩ at VGS=-4.5V. It operates within a temperature range of -55°C to +150°C.

Feature Summary

Designed for high-efficiency power management applications with minimized on-state resistance and superior switching performance.
Features a compact footprint that is significantly smaller than traditional SOT23 packages.
Includes ESD protected gate structures and qualified to AEC-Q101 standards for automotive reliability.

Applications

Portable electronics
High-efficiency power management systems

Procurement Notes

Verify the specific ordering suffix '-7B' corresponds to the 10,000-unit tape and reel packaging configuration. Confirm compliance with RoHS 3 and Halogen-free requirements as defined by the manufacturer's green product standards. Ensure the application environment remains within the specified thermal limits for the X1-DFN1006-3 case.

Selection Notes

Select this component when space constraints require a footprint smaller than standard SOT23 packages while maintaining reliable switching performance. Consider the low gate threshold voltage for compatibility with low-voltage logic drivers. Evaluate the thermal resistance characteristics against the expected ambient operating temperatures and duty cycles.

Part Context

This part belongs to the DMP21D0UFB series of P-channel MOSFETs from Diodes Incorporated. The series utilizes the X1-DFN1006-3 case style, which offers a highly compact solution for modern electronic designs requiring efficient power handling in minimal board space.

Replacement Considerations

The datasheet lists DMP21D0UFB-7 as an equivalent part number differing only in packaging quantity (3,000 units per tape and reel). No other substitute part numbers are documented in the provided source material.