DMP21D0UFB4-7R

$0.35

Description：MOSFET BVDSS: 8V~24V X2-DFN1006-
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:a998dc085c26 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 8V~24V X2-DFN1006-
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：20 V
Current - Continuous Drain (Id) @ 25°C：770mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
Rds On (Max) @ Id, Vgs：495mOhm @ 400mA, 4.5V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：1.5 nC @ 8 V
Vgs (Max)：±8V
Input Capacitance (Ciss) (Max) @ Vds：76.5 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：430mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：X2-DFN1006-3
Package / Case：3-XFDFN

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DMP21D0UFB4-7R

Overview

The DMP21D0UFB4-7R is a 20V P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features an X2-DFN1006-3 package with a footprint of 0.6mm² and a profile of 0.4mm. The device has a drain-source breakdown voltage (BVDSS) of -20V, a continuous drain current (ID) of -0.77A at +25°C, and a maximum on-resistance (RDS(ON)) of 495mΩ at VGS = -4.5V. It operates within a temperature range of -55°C to +150°C.

Feature Summary

Designed for high efficiency power management applications with minimized on-state resistance and superior switching performance.
Features a compact X2-DFN1006-3 footprint that is significantly smaller than standard SOT23 packages, suitable for low-profile designs.
Includes ESD protection on the gate terminal and utilizes a totally lead-free, fully RoHS compliant construction.

Applications

Portable electronics
High efficiency power management circuits

Procurement Notes

Verify the specific ordering suffix '-7R' corresponds to the 3,000 units per reel packaging configuration as defined in the manufacturer's ordering information. Confirm compliance requirements such as RoHS 3 and halogen-free status against project specifications. Ensure the X2-DFN1006-3 package dimensions and thermal characteristics align with the target PCB layout and thermal management strategy.

Selection Notes

Select this component for applications requiring a small form factor P-channel MOSFET with moderate current handling capabilities. Consider the thermal resistance values and power dissipation limits when designing for steady-state versus pulsed operation. Evaluate the gate threshold voltage and total gate charge to ensure compatibility with the intended drive circuitry for optimal switching performance.

Part Context

This part belongs to the DMP21 series of P-channel enhancement mode MOSFETs from Diodes Incorporated. The series focuses on providing low on-resistance in miniature packages to support space-constrained portable devices. The DMP21D0UFB4 variant specifically utilizes the X2-DFN1006-3 case style to achieve a reduced physical footprint compared to traditional surface mount packages.

Replacement Considerations

Direct substitutes include other 20V P-channel MOSFETs in the X2-DFN1006-3 package or equivalent small footprints. Verify electrical parameters such as RDS(ON), ID, and BVDSS match or exceed original specifications. Check pinout compatibility and thermal characteristics to ensure seamless integration without redesigning the PCB layout.