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Product Detailed Parameters
- Description：MOSFET 2P-CH 20V 2A SOT26
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 P-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：2A
- Rds On (Max) @ Id, Vgs：150mOhm @ 2A, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：-
- Input Capacitance (Ciss) (Max) @ Vds：320pF @ 16V
- Power - Max：600mW
- Operating Temperature：-65°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-23-6
- Supplier Device Package：SOT-26
- Grade：-
- Qualification：-
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Overview
The DMP2240UDM-7 is a dual P-channel enhancement mode field effect transistor in an SOT-26 package. It features a drain-source voltage of -20 V and a continuous drain current of -2.0 A at 25°C. The device exhibits low on-resistance, reaching 150 mΩ at VGS = -4.5V and 240 mΩ at VGS = -1.8V. Total power dissipation is rated at 600 mW with a thermal resistance of 208 °C/W. Operating temperature ranges from -65°C to +150°C.
Feature Summary
- Dual P-channel MOSFET configuration
- Low on-resistance for efficient conduction
- Very low gate threshold voltage
- Fast switching speed
Applications
- Battery protection circuits
- Power management systems
- Load switches
Procurement Notes
Verify the component against Diodes Incorporated datasheet DS31197 Rev. 5-2. Confirm the SOT-26 package type and the -7 suffix indicating tape and reel packaging. Ensure compliance with RoHS standards and AEC-Q101 qualification requirements as specified by the manufacturer.
Selection Notes
Select this component for applications requiring dual P-channel isolation in a compact surface-mount footprint. Evaluate the 150 mΩ on-resistance at -4.5V gate drive against system power loss constraints. Consider the -65°C to +150°C operating range for environmental suitability.
Part Context
This part belongs to the DMP series of dual P-channel enhancement mode field effect transistors manufactured by Diodes Incorporated. It utilizes an SOT-26 case design with molded plastic construction. The device is lead-free by design and complies with UL 94V-0 flammability ratings.
Replacement Considerations
Cross-reference with other dual P-channel MOSFETs in the SOT-26 package. Verify matching electrical parameters such as drain-source voltage and on-resistance before substitution.
FAQ
What is the maximum pulsed drain current?
The maximum pulsed drain current (IDM) is -7 A.
Is the device qualified for automotive applications?
Yes, it is qualified to AEC-Q101 standards for high reliability.
What is the typical input capacitance?
The typical input capacitance (Ciss) is 320 pF at VDS = -16V and VGS = 0V.
