DMP22D3UFZ-7B

Overview

The DMP22D3UFZ-7B is a P-channel enhancement mode MOSFET from Diodes Incorporated, housed in an X2-DFN0606-3 package. It features a drain-source voltage (V_DSS) of -20 V and a maximum gate-source voltage (V_GS) of ±8 V. The device offers low on-resistance, with R_DS(ON) values ranging from 1.4 Ω at V_GS = -4.5 V to 5.0 Ω at V_GS = -1.5 V. Continuous drain current (I_D) reaches -0.39 A at +25°C. Key electrical parameters include a gate threshold voltage (V_GS(TH)) max of -1.0 V, total gate charge (Q_g) of 0.3 nC, and input capacitance (C_iss) of 17 pF. Operating temperature ranges from -55°C to +150°C.

Feature Summary

• Low package profile with a maximum height of 0.42 mm and a compact 0.62 mm x 0.62 mm footprint.
• Optimized for high-efficiency power management through minimized on-state resistance while maintaining superior switching performance.
• Features very low gate threshold voltage and integrated ESD protection for the gate terminal.

Applications

• General-purpose interfacing switches
• Power-management functions
• Analog switches

Procurement Notes

Verify the specific ordering suffix '-7B' corresponds to the 10k Tape & Reel packaging configuration as documented in the manufacturer's ordering information. Confirm that the component meets RoHS 3 compliance and Halogen/Antimony-free requirements if environmental standards are critical to the design. Ensure the selected part number matches the exact electrical characteristics defined in the datasheet.

Selection Notes

Select this component when space constraints require the X2-DFN0606-3 package and low on-resistance is prioritized for efficiency. Consider the -20 V rating and -0.39 A continuous current capability against load requirements. Evaluate the low gate threshold voltage (-1.0 V max) compatibility with available drive voltages. Verify thermal dissipation needs against the specified junction-to-ambient thermal resistance.

Part Context

This component belongs to the DMP22 series of P-channel MOSFETs designed by Diodes Incorporated. These devices utilize silicon technology and are intended for surface-mount applications requiring small footprints. The series focuses on balancing low static losses with fast dynamic switching capabilities suitable for modern portable and battery-powered electronics.

Replacement Considerations

Consult official Diodes Incorporated documentation or authorized distributors for confirmed substitute part numbers. Do not assume cross-compatibility based solely on package type or general specifications without verifying electrical limits and pin configurations.

FAQ

What is the maximum gate-source voltage rating?

The absolute maximum rating for Gate-Source Voltage (V_GS) is ±8 V.

How does the on-resistance vary with gate voltage?

R_DS(ON) increases as the magnitude of the gate-source voltage decreases. It is 1.4 Ω max at -4.5 V and rises to 5.0 Ω max at -1.5 V.