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Product Detailed Parameters
- Description：MOSFET 2P-CH 20V 0.328A 6DFN
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 P-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：328mA (Ta)
- Rds On (Max) @ Id, Vgs：1.9Ohm @ 100mA, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：0.4nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：28.5pF @ 15V
- Power - Max：310mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-SMD, No Lead
- Supplier Device Package：X2-DFN0806-6
- Grade：-
- Qualification：-
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Overview
The DMP22D4UDA-7B is a dual P-channel enhancement mode MOSFET in an X2-DFN0806-6 package. It features a -20V drain-source voltage and a maximum continuous drain current of -328mA at +25°C. The device offers low on-resistance, reaching 1.9Ω max at VGS = -4.5V. Total power dissipation is 310mW with a thermal resistance of 407°C/W. Operating temperature ranges from -55°C to +150°C.
Feature Summary
- Dual P-channel configuration within an ultra-small surface mount package
- Low on-state resistance for high efficiency power management
- Very low gate threshold voltage enabling logic-level compatibility
- ESD protected gates with fast switching speed characteristics
Applications
- General purpose interfacing switch
- Power management functions
- Analog switch applications
Procurement Notes
Verify the specific ordering suffix '-7B' against the manufacturer's official documentation to confirm packaging details and tape-and-reel quantities. Ensure compliance with RoHS and halogen-free requirements as defined by Diodes Incorporated. Confirm that the X2-DFN0806-6 footprint matches your PCB layout guidelines before finalizing procurement.
Selection Notes
Select this component when space constraints require an ultra-small 0.8mm x 0.6mm package. It is suitable for applications needing dual P-channel isolation or switching within a single footprint. Consider the 310mW power dissipation limit and 407°C/W thermal resistance for adequate heat sinking on FR-4 PCBs.
Part Context
This part belongs to the DMP22 series of dual P-channel MOSFETs designed by Diodes Incorporated. It utilizes silicon technology and is housed in a leadless X2-DFN0806-6 case. The device is fully RoHS compliant and manufactured using green molding compounds without intentionally added lead.
Replacement Considerations
Consult the manufacturer's cross-reference guide for verified substitutes. Ensure any replacement maintains the X2-DFN0806-6 package dimensions and dual P-channel topology.
FAQ
What is the maximum continuous drain current for this device?
The maximum continuous drain current is -328mA at an ambient temperature of +25°C.
Does the device include internal protection?
Yes, the gates are ESD protected, and the datasheet indicates internal gate protection diodes.
What is the operating junction temperature range?
The operating and storage temperature range extends from -55°C to +150°C.
