DMP22D4UFO-7B

$0.37

Description：MOSFET P-CH 20V 530MA 3DFN
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:476dbc2fe6e5 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET P-CH 20V 530MA 3DFN
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：20 V
Current - Continuous Drain (Id) @ 25°C：530mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：1.5V, 4.5V
Rds On (Max) @ Id, Vgs：1.9Ohm @ 100mA, 4.5V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：0.4 nC @ 4.5 V
Vgs (Max)：±8V
Input Capacitance (Ciss) (Max) @ Vds：28.7 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：820mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：X2-DFN0604-3
Package / Case：3-XFDFN

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DMP22D4UFO-7B

Overview

The DMP22D4UFO-7B is a single P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a -20V drain-source voltage rating and an X2-DFN0604-3 surface-mount package. The device exhibits a maximum on-resistance of 1.9Ω at VGS = -4.5V and a continuous drain current of -530mA at +25°C. Key electrical parameters include a gate threshold voltage of -1.0V max, total gate charge of 0.4nC, and power dissipation of 820mW. Operating temperature ranges from -55°C to +150°C.

Feature Summary

Designed for high efficiency power management applications with minimized on-state resistance.
Features a very low gate threshold voltage of -1.0V maximum.
Includes integrated ESD protection for the gate terminal.
Qualified to AEC-Q101 standards for automotive reliability.

Applications

General purpose interfacing switch
Power management functions
Analog switch

Procurement Notes

Verify the specific ordering suffix '-7B' against official manufacturer documentation to confirm packaging details and tape-and-reel quantities. Ensure compliance with RoHS 3 and halogen-free requirements as defined in the datasheet notes. Confirm that the X2-DFN0604-3 footprint matches the target PCB layout constraints before finalizing procurement orders.

Selection Notes

Select this component when a compact P-channel MOSFET with low on-resistance is required for space-constrained designs. The -20V rating suits low-voltage logic interfaces. Consider the thermal resistance characteristics if operating near the upper temperature limits. Verify that the gate drive voltage meets the minimum threshold requirements for optimal conduction performance.

Part Context

This part belongs to the DMP22 series of P-channel MOSFETs from Diodes Incorporated. It utilizes silicon technology and is housed in an X2-DFN0604-3 case. The product is designed to balance low static losses with superior switching performance, targeting modern portable electronics and battery-powered systems requiring efficient power control.

Replacement Considerations

Consult the manufacturer's official cross-reference documentation for verified substitute part numbers. Do not assume compatibility based solely on similar voltage or current ratings without verifying pinout and thermal specifications.