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The DMP22D5UDR4 is a dual P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a -20V drain-source breakdown voltage and an on-resistance of 1.9Ω at VGS = -4.5V. The device supports a maximum continuous drain current of -0.36A at +25°C and operates within a junction temperature range of -55°C to +150°C. Packaged in an X2-DFN1010-6 (Type UXC) surface-mount format, it includes ESD protection for the gate terminal.
Verify the complete orderable part number, which typically includes a suffix such as '-7' for tape and reel packaging. Confirm that the specific package type matches the required footprint. Ensure compliance with RoHS directives and verify lead-free status if mandated by project specifications before finalizing procurement.
Select this component when a compact dual P-channel solution is required for low-voltage applications. Evaluate the thermal resistance values against the expected ambient conditions and copper pad layout. Consider the gate threshold voltage requirements to ensure compatibility with the available logic drive levels for optimal switching performance.
This device belongs to the DMP series of dual P-channel enhancement mode MOSFETs from Diodes Incorporated. It utilizes the X2-DFN1010-6 package, designed for space-constrained surface-mount applications. The product line emphasizes minimizing on-state resistance while maintaining superior switching characteristics for modern electronic designs.
Consult official manufacturer documentation for verified substitute part numbers. Do not assume cross-compatibility based solely on pinout or general electrical ratings without verifying specific parameter tolerances and package dimensions.
The maximum continuous drain current is -0.36A at a case temperature of +25°C.
Yes, the gate terminal is internally protected against electrostatic discharge (ESD).
The junction and storage temperature range extends from -55°C to +150°C.