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Product Detailed Parameters
- Description：MOSFET P-CH 20V 60A PWRDI5060-8
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：20 V
- Current - Continuous Drain (Id) @ 25°C：60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：2.5V, 10V
- Rds On (Max) @ Id, Vgs：2.5mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id：1.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：476 nC @ 10 V
- Vgs (Max)：±12V
- Input Capacitance (Ciss) (Max) @ Vds：12826 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：2.3W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PowerDI5060-8 (Type K)
- Package / Case：8-PowerTDFN
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Overview
The DMP22M2UPS-13 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It utilizes the PowerDI5060-8 surface-mount package and operates with a drain-source voltage of -20V. The device supports a continuous drain current of -60A at +25°C case temperature. Static drain-source on-resistance is specified as 2.5mΩ at VGS = -10V and 3.5mΩ at VGS = -4.5V, both measured at -60A. Total gate charge is 476nC at VGS = -10V. Operating junction temperature ranges from -55°C to +150°C.
Feature Summary
- Thermally efficient PowerDI5060-8 package designed for cooler running applications
- Low RDS(ON) characteristics that minimize on-state power losses
- High conversion efficiency suitable for thin applications due to low profile
- Lead-free finish compliant with RoHS directives
Applications
- Load Switch
- Notebook Battery Power Management
Procurement Notes
Verify the complete part number includes the -13 suffix for tape and reel packaging containing 2,500 units per carrier. Confirm the specific ordering information matches the required package type and quantity before finalizing procurement documentation.
Selection Notes
Select this component when designing circuits requiring a -20V P-channel MOSFET in a compact PowerDI5060-8 footprint. Ensure thermal management strategies account for the specified thermal resistance values under steady-state conditions.
Part Context
This component belongs to the DMP22M2UPS series of P-channel enhancement mode MOSFETs produced by Diodes Incorporated. It is engineered to provide superior switching performance while maintaining minimized on-resistance within a specialized low-profile surface-mount package.
Replacement Considerations
Consult official manufacturer substitution lists or contact Diodes Incorporated directly for verified alternative components. Do not assume cross-compatibility based solely on similar electrical ratings without explicit confirmation.
FAQ
What is the maximum pulsed drain current rating?
The maximum pulsed drain current (IDM) is rated at -100A, defined by a 10μs pulse duration with a 1% duty cycle.
How does the on-resistance vary with temperature?
The on-resistance increases as the junction temperature rises. Graphical data indicates positive temperature coefficients across the operating range from -55°C to +150°C.
