DMP2540UCB9-7

$0.15

Description：MOSFET P-CH 25V 4A U-WLB1515-9
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:bcde57335965 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：MOSFET P-CH 25V 4A U-WLB1515-9
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：25 V
Current - Continuous Drain (Id) @ 25°C：4A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
Rds On (Max) @ Id, Vgs：40mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id：1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：6 nC @ 4.5 V
Vgs (Max)：-6V
Input Capacitance (Ciss) (Max) @ Vds：450 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：1W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：U-WLB1515-9
Package / Case：9-UFBGA, WLBGA

Download product information

DMP2540UCB9-7

Overview

The DMP2540UCB9-7 is a P-channel enhancement mode MOSFET from Diodes Incorporated, utilizing LD-MOS technology. It features a -25V drain-source voltage (VDSS) and a typical on-resistance of 33mΩ at VGS = -4.5V. The device supports a continuous drain current of -5.2A at +25°C and offers ultra-fast switching with a total gate charge of 4.8nC. Packaged in the U-WLB1515-9 CSP footprint measuring 1.5mm x 1.5mm with a height of 0.62mm, it operates within a temperature range of -55°C to +150°C.

Feature Summary

LD-MOS technology minimizes on-state losses while maintaining superior switching performance
Low turn-on potential achieved through a typical gate threshold voltage of -0.6V
ESD protection rated at 6kV HBM for the gate terminal
Qualified to AEC-Q101 standards for high reliability applications

Applications

Battery management systems
Load switch circuits
Battery protection modules

Procurement Notes

Verify component authenticity by checking the marking code against the manufacturer's date code key. Confirm compliance with RoHS directives and ensure the package matches the specified U-WLB1515-9 dimensions. Validate that the ordering suffix corresponds to the required tape and reel packaging quantity before finalizing procurement orders.

Selection Notes

Select this component when low profile and minimal on-state resistance are critical for power efficiency. Ensure the application requires a -25V rating and can accommodate the specific thermal characteristics of the U-WLB1515-9 package. Verify that the gate drive voltage aligns with the low threshold requirements for optimal switching performance.

Part Context

This part belongs to the DMP series of P-channel MOSFETs designed for high-efficiency power management. It represents an advancement in LD-MOS technology, focusing on reducing the figure of merit between on-resistance and gate charge. The compact CSP package allows for dense PCB layouts in portable and automotive electronics.

Replacement Considerations

Consult official substitution lists for verified alternatives. Cross-reference pin configurations and electrical parameters carefully to ensure compatibility without modifying existing circuit designs or thermal management strategies.