DMP26M7UFG-13

$0.26

Description：MOSFET P-CH 20V 18A PWRDI3333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:4cda0fcad2c4 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET P-CH 20V 18A PWRDI3333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：20 V
Current - Continuous Drain (Id) @ 25°C：18A (Ta), 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
Rds On (Max) @ Id, Vgs：6.7mOhm @ 15A, 4.5V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：156 nC @ 10 V
Vgs (Max)：±10V
Input Capacitance (Ciss) (Max) @ Vds：5940 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：2.3W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：POWERDI3333-8
Package / Case：8-PowerVDFN

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DMP26M7UFG-13

Overview

The DMP26M7UFG-13 is a single-channel P-Channel Enhancement Mode MOSFET manufactured by Diodes Incorporated. It features a -20V drain-source breakdown voltage and a maximum continuous drain current of -40A at case temperature of +25°C. The device exhibits a typical on-resistance of 4.2mΩ at VGS = -4.5V and ID = -15A, with a maximum of 6.7mΩ under the same conditions. Total gate charge is typically 156nC at VGS = -10V. It operates within a junction temperature range of -55°C to +150°C and utilizes the POWERDI3333-8 surface-mount package.

Feature Summary

Low on-state resistance minimizes conduction losses for high efficiency power management
POWERDI3333-8 package occupies significantly less board area than SO-8 equivalents
ESD protection rated up to 1kV via Human Body Model standard
Totally lead-free and fully RoHS compliant construction

Applications

Load switching circuits
Power management functions in compact electronics

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 3000-unit tape and reel packaging configuration. Confirm that the component meets all applicable environmental compliance standards required for the target assembly process. Ensure the selected variant matches the exact electrical parameters documented in the official datasheet.

Selection Notes

Select this component when space-constrained designs require high-current handling capabilities within a minimal footprint. The low on-resistance characteristics make it suitable for applications demanding efficient power conversion. Verify that the gate drive voltage levels align with the specified thresholds for optimal performance.

Part Context

This part belongs to the DMP26M series of P-Channel MOSFETs from Diodes Incorporated. It is designed specifically for applications requiring superior switching performance combined with minimized on-state resistance. The product line emphasizes thermally efficient packaging solutions for modern electronic devices.

Replacement Considerations

The DMP26M7UFG-7 serves as an alternative packaging option within the same electrical specification family. Both variants share identical semiconductor characteristics and are housed in the POWERDI3333-8 case.