DMP2900UDW-13

Overview

The DMP2900UDW-13 is a dual p-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It integrates two independent P-channel MOSFETs within a single SOT363 surface-mount package. The device features a drain-source voltage (BVDSS) of -20V and a maximum continuous drain current of -0.63A at +25°C. Static drain-source on-resistance (RDS(ON)) is specified as 0.75Ω max at VGS = -4.5V and 1.05Ω max at VGS = -2.5V. Total gate charge is typically 0.7nC, with turn-on delay time at 16ns. Operating temperature range spans from -55°C to +150°C.

Feature Summary

• Dual configuration integrating two P-channel MOSFETs in one compact SOT363 package
• Optimized for low on-state resistance while maintaining superior switching performance
• Includes integrated gate protection diode for enhanced ESD robustness
• Compliant with RoHS standards and halogen-free manufacturing requirements

Applications

• Battery operated systems
• Solid-state relays
• Power supply converter circuits
• Drivers for relays, solenoids, lamps, displays, and memories

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 10,000-unit tape and reel packaging format. Confirm that the component meets all applicable environmental directives, including RoHS 3 compliance and halogen-free status, as defined by the manufacturer's quality definitions. Ensure the procurement channel is authorized to guarantee product authenticity and traceability.

Selection Notes

Select this component when space constraints require dual switch functionality within an ultra-small SOT363 footprint. Evaluate thermal management requirements against the junction-to-ambient thermal resistance values provided in the datasheet. Verify that the required gate drive voltage aligns with the specified RDS(ON) characteristics to ensure optimal efficiency in power management applications.

Part Context

This part belongs to Diodes Incorporated's advanced generation MOSFET portfolio designed for high-efficiency power management. The DMP2900UDW series specifically targets applications requiring minimized on-state resistance without compromising switching speed. It serves as a compact solution for replacing discrete dual-MOSFET arrangements in portable and battery-powered electronics.

Replacement Considerations

Consult official cross-reference tools or contact Diodes Incorporated directly for verified substitute part numbers. Do not assume functional equivalence based solely on package type or generic specifications.

FAQ

What is the function of the internal diode in the DMP2900UDW?

The device includes an integrated gate protection diode to provide electrostatic discharge (ESD) protection.

How does the on-resistance vary with gate voltage?

The static drain-source on-resistance decreases as the magnitude of the gate-source voltage increases, with lower resistance values achieved at VGS = -4.5V compared to -2.5V or -1.8V.

Is the DMP2900UDW suitable for automotive applications?

For automotive applications requiring specific change control or AEC-Q qualification, customers must contact Diodes Incorporated or their local representative directly.