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The DMP2900UDW-7 is a dual p-channel enhancement mode MOSFET manufactured by Diodes Incorporated in an SOT363 surface-mount package. It features a drain-source voltage (BVDSS) of -20V and a maximum continuous drain current (ID) of -0.63A at +25°C. The device offers a typical on-resistance (RDS(ON)) of 0.4Ω at VGS = -4.5V and 0.53Ω at VGS = -2.5V. Operating temperature ranges from -55°C to +150°C, with total power dissipation rated at 0.37W steady state.
Verify the specific ordering suffix '-7' corresponds to the 3,000 units per tape and reel packaging format when placing orders. Confirm that the component meets all applicable RoHS and environmental directives required for your manufacturing process. Ensure compatibility with standard SMT assembly equipment for the SOT363 case outline.
Select this component for applications requiring compact dual p-channel MOSFET solutions with low on-resistance. Consider the -20V rating and -0.63A continuous current limits for load management. Evaluate thermal constraints based on the 340 °C/W junction-to-ambient resistance for steady-state operation on FR-4 substrates.
This part belongs to Diodes Incorporated's new generation MOSFET lineup designed to minimize on-state resistance without compromising switching speed. It serves as a high-efficiency power management solution suitable for space-constrained portable electronics and industrial control modules requiring reliable solid-state switching capabilities.
DMP2900UDW-13: Identical electrical specifications and pinout; differs only in packaging quantity (10,000 units per tape and reel instead of 3,000).
The maximum continuous drain current is -0.63A at an ambient temperature of +25°C.
Yes, the device includes an integrated gate protection diode and is ESD protected.
The operating and storage temperature range is from -55°C to +150°C.