DMP2900UV-13

$0.07

Description：MOSFET 2P-CH 20V 0.85A SOT563
Series：-

SKU:c17713e4b7e4 Category: FET, MOSFET Arrays Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET 2P-CH 20V 0.85A SOT563
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
Technology：MOSFET (Metal Oxide)
Configuration：2 P-Channel (Dual)
FET Feature：-
Drain to Source Voltage (Vdss)：20V
Current - Continuous Drain (Id) @ 25°C：850mA (Ta)
Rds On (Max) @ Id, Vgs：750mOhm @ 430mA, 4.5V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：0.7nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds：49pF @ 16V
Power - Max：500mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：SOT-563, SOT-666
Supplier Device Package：SOT-563
Grade：-
Qualification：-

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DMP2900UV-13

Overview

The DMP2900UV-13 is a dual P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a -20V drain-source breakdown voltage (BVDSS) and operates within a junction temperature range of -55°C to +150°C. The device provides a maximum on-resistance (RDS(ON)) of 0.75Ω at VGS = -4.5V with a continuous drain current of -0.85A at +25°C. It utilizes an SOT563 surface-mount package and includes internal gate protection diodes.

Feature Summary

Dual P-channel configuration in a compact SOT563 package
Low on-state resistance for high-efficiency power management
Fast switching speed with low input capacitance
ESD protected gate structure

Applications

DC-DC Converters
Load Switch
Power Management Functions

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 10,000-unit tape and reel packaging format. Confirm that the component meets RoHS 3 compliance requirements if necessary for your region. Ensure the design accommodates the thermal characteristics associated with the SOT563 case material and leadframe finish.

Selection Notes

Select this component when a dual P-channel solution is required in a minimal footprint. The low gate threshold voltage allows compatibility with various logic levels. Consider the thermal resistance values when designing for steady-state versus pulsed operation conditions.

Part Context

This part belongs to the DMP2900 series of advanced P-channel MOSFETs from Diodes Incorporated. It is designed to minimize on-state resistance while maintaining superior switching performance. The series targets applications requiring efficient power management in space-constrained environments.

Replacement Considerations

Consult official documentation for verified substitutes. Cross-referencing requires matching electrical parameters such as BVDSS, RDS(ON), and package type.