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The DMP2900UWQ-13 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a -20V drain-source breakdown voltage and operates in an SOT323 surface-mount package. The device supports a continuous drain current of -0.6A at +25°C, with a static on-resistance of 750mΩ at VGS = -4.5V. Total power dissipation reaches 0.3W under standard conditions. It is qualified to AEC-Q101 standards for automotive use.
Verify the specific ordering suffix '-13' corresponds to the 10,000-unit tape and reel carrier configuration. Confirm that the component meets the required IATF16949 manufacturing facility standards if automotive change control protocols are mandated for the target application.
Select this component when a compact SOT323 footprint is required for low-voltage P-channel switching. Ensure the design accommodates the specified -20V maximum rating and verify that the thermal resistance characteristics align with the expected duty cycle and ambient temperature constraints.
This part belongs to the DMP2900 series of P-channel MOSFETs from Diodes Incorporated. It is designed specifically to meet stringent automotive reliability requirements while maintaining a small physical profile suitable for dense printed circuit board layouts.
Consult official manufacturer documentation for verified equivalent part numbers. Do not substitute based solely on generic electrical parameters without confirming package compatibility and qualification status.