DMP2900UWQ-7

$0.05

Description：MOSFET BVDSS: 8V~24V SOT323 T&R
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:45feb8c66238 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 8V~24V SOT323 T&R
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：20 V
Current - Continuous Drain (Id) @ 25°C：600mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
Rds On (Max) @ Id, Vgs：750mOhm @ 430mA, 4.5V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：0.7 nC @ 4.5 V
Vgs (Max)：±6V
Input Capacitance (Ciss) (Max) @ Vds：49 pF @ 16 V
FET Feature：-
Power Dissipation (Max)：300mW
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：SOT-323
Package / Case：SC-70, SOT-323

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DMP2900UWQ-7

Overview

The DMP2900UWQ-7 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a -20V drain-source breakdown voltage and operates within a junction temperature range of -55°C to +150°C. The device provides an on-resistance of 750mΩ at VGS = -4.5V with a continuous drain current of -0.6A. It utilizes a SOT323 package and is qualified to AEC-Q101 standards for automotive applications.

Feature Summary

Qualified to AEC-Q101 standards with PPAP capability for automotive use
Designed for low on-resistance and fast switching speed
Features low gate threshold voltage and low input capacitance
Includes ESD protected gate and low input/output leakage

Applications

DC-DC converters
Load switches
Power-management functions

Procurement Notes

Verify the specific ordering suffix (e.g., -7 or -13) against the required tape and reel quantity, as these determine the packing carrier. Confirm that the component meets the necessary IATF16949 manufacturing facility requirements if strict automotive change control protocols are mandated for the project.

Selection Notes

Select this component when a compact SOT323 footprint is required for low-voltage power management. The low gate threshold voltage supports efficient drive from standard logic levels. Ensure the application current remains within the specified continuous drain limits to maintain thermal stability in the small outline package.

Part Context

This part belongs to the DMP2900 series of P-channel MOSFETs designed specifically for automotive environments. It is manufactured in IATF16949 certified facilities and is halogen-free. The device is intended for high-reliability applications requiring stringent quality control and specific change management procedures.