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Product Detailed Parameters
- Description：MOSFET BVDSS: 25V~30V POWERDI506
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：15A (Ta), 92A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：7.5mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id：2.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：106 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：5639 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：1.6W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount, Wettable Flank
- Supplier Device Package：PowerDI5060-8 (Type UX)
- Package / Case：8-PowerTDFN
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Overview
The DMP3006LPSW-13 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated, housed in a PowerDI5060-8 package. It features a drain-source voltage (BVDSS) of -30V and a maximum continuous drain current (ID) of -92A at TC = +25°C. The device exhibits a typical on-resistance (RDS(ON)) of 7.5mΩ at VGS = -10V and 11mΩ at VGS = -4.5V. Total gate charge (Qg) is 106nC at VGS = -10V. Operating temperature range spans from -55°C to +150°C.
Feature Summary
- Thermally efficient PowerDI5060-8 package with less than 1.1mm profile for thin applications
- Low RDS(ON) minimizes on-state losses while maintaining superior switching performance
- ESD HBM protection rated up to 1kV
- Lead-free finish compliant with RoHS directives
Applications
- Notebook battery power management
- DC-DC converters
- Load switches
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the Tape & Reel carrier configuration containing 2,500 units per reel as documented in the manufacturer's ordering information. Confirm that the component meets the required environmental standards, including RoHS compliance and Halogen/Antimony-free status, before finalizing procurement specifications.
Selection Notes
Select this component for designs requiring high current handling capabilities within a low-profile surface-mount footprint. Ensure the gate drive voltage aligns with the specified thresholds for optimal RDS(ON) performance. Evaluate thermal management requirements based on the junction-to-ambient resistance values provided in the datasheet for the intended PCB copper area.
Part Context
This part belongs to the DMP series of P-channel MOSFETs from Diodes Incorporated. It utilizes silicon technology and is designed for general-purpose switching applications where efficiency and thermal performance are critical. The PowerDI packaging family offers improved thermal dissipation compared to traditional plastic packages.
Replacement Considerations
Consult official Diodes Incorporated documentation for verified substitute part numbers. Cross-referencing should be performed carefully to ensure compatibility with voltage ratings, current capacity, and package dimensions.
