DMP3007SPS-13

$1.14

Description：MOSFET P-CH 30V 90A PWRDI5060-8
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:0ffa8f2ccd3b Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET P-CH 30V 90A PWRDI5060-8
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：90A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：7mOhm @ 15A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：64.2 nC @ 10 V
Vgs (Max)：±25V
Input Capacitance (Ciss) (Max) @ Vds：2826 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：2.7W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PowerDI5060-8
Package / Case：8-PowerTDFN

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DMP3007SPS-13

Overview

The DMP3007SPS-13 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a -30V drain-source voltage rating and utilizes the PowerDI5060-8 surface-mount package. The device achieves a maximum on-resistance of 7mΩ at VGS=-10V, supporting a continuous drain current of -90A at TC=+25°C. Key electrical parameters include a gate threshold voltage of -1.0V to -3.0V, total gate charge of 64.2nC at VGS=-10V, and an operating junction temperature range from -55°C to +150°C.

Feature Summary

Low on-state resistance minimizes conduction losses for high-efficiency power management.
Small form factor thermally efficient package enables higher density end products.
100% unclamped inductive switching ensures improved reliability under transient conditions.
ESD protected gate structure provides enhanced protection against electrostatic discharge.

Applications

Backlighting
Power Management Functions
DC-DC Converters

Procurement Notes

Verify component authenticity through authorized distribution channels. Confirm RoHS compliance and Halogen-free status as specified in the datasheet notes. Ensure proper handling procedures are followed due to ESD sensitivity. Validate that the PowerDI5060-8 package dimensions match the target PCB layout requirements before finalizing procurement.

Selection Notes

Select this component for applications requiring low RDS(ON) within a compact footprint. Evaluate thermal performance based on the specific ambient temperature and copper pad layout. Consider the gate charge characteristics when designing drive circuits for optimal switching speeds. Verify that the -30V rating aligns with the system's maximum voltage stress limits.

Part Context

This part belongs to the DMP series of P-channel MOSFETs from Diodes Incorporated. It is designed to balance low on-state resistance with superior switching performance. The PowerDI5060-8 package offers a thermally efficient solution compared to traditional packages, facilitating its use in space-constrained portable electronics and power supply designs.

Replacement Considerations

Consult official substitution lists or contact Diodes Incorporated directly for verified alternatives. Cross-reference pinouts, package dimensions, and electrical ratings carefully. Do not assume functional equivalence without validating all critical parameters against the original design specifications.