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Product Detailed Parameters
- Description：MOSFET P-CH 30V 17A TO252
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：17A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：8mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id：2.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：59.2 nC @ 4.5 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：6234 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：1.7W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：TO-252-3
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
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Overview
The DMP3010LK3-13 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a TO-252 (DPAK) package with a drain-source voltage (BVDSS) of -30V. The device offers a maximum on-resistance (RDS(ON)) of 8mΩ at VGS = -10V and 10.2mΩ at VGS = -4.5V. Continuous drain current ratings are -17A at +25°C for VGS = -10V and -14.5A at +25°C for VGS = -4.5V. It supports an operating junction temperature range from -55°C to +150°C.
Feature Summary
- Designed to minimize on-state resistance while maintaining superior switching performance for high efficiency power management applications.
- Features low input capacitance and fast switching speed characteristics.
- Qualified to JEDEC standards for high reliability and compliant with RoHS directives, being halogen and antimony free.
Applications
- DC-DC converters
- Power management functions
- Backlighting
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the tape and reel packaging quantity of 2500 units as defined in the manufacturer's documentation. Confirm that the component meets all applicable environmental compliance requirements, including RoHS and lead-free specifications, prior to integration into final assemblies.
Selection Notes
Select this component for circuits requiring a -30V P-channel MOSFET in a TO-252 package. Ensure the gate drive voltage aligns with the specified thresholds for optimal RDS(ON) performance. Evaluate thermal dissipation requirements against the stated junction-to-ambient resistance values for the intended PCB layout conditions.
Part Context
This part belongs to the DMP3010LK3 series of P-channel enhancement mode MOSFETs from Diodes Incorporated. It is designed for general-purpose power switching applications where low on-resistance and fast switching are critical. The product is marked as not recommended for new design, with DMP3007LK3 suggested as an alternative.
Replacement Considerations
The datasheet explicitly recommends using DMP3007LK3 as the substitute part number for new designs.
FAQ
What is the maximum pulsed drain current for this device?
The maximum pulsed drain current (IDM) is rated at -100 A, based on a 10µs pulse duration with a 1% duty cycle.
Is this component suitable for automotive applications?
This specific part is qualified to JEDEC standards for high reliability. For automotive applications requiring AEC-Q qualification and PPAP capability, customers should refer to the related automotive grade parts with the Q-suffix.
