DMP3011SFVWQ-7

$0.99

Description：MOSFET P-CH 30V 11.5A PWRDI3333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:16a0280e6994 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET P-CH 30V 11.5A PWRDI3333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：19.8A (Ta), 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：10mOhm @ 11.5A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：46 nC @ 10 V
Vgs (Max)：±25V
Input Capacitance (Ciss) (Max) @ Vds：2380 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：980mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：PowerDI3333-8
Package / Case：8-PowerVDFN

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DMP3011SFVWQ-7

Overview

The DMP3011SFVWQ is a P-channel enhancement mode MOSFET designed for automotive applications. It features a -30V drain-source voltage and a maximum continuous drain current of -50A at TC = +25°C. The device offers a low on-resistance of 10mΩ at VGS = -10V and 18mΩ at VGS = -4.5V. Packaged in a thermally efficient PowerDI3333-8 case, it supports an operating temperature range from -55°C to +150°C.

Feature Summary

Low RDS(on) ensures minimized on-state losses
Small form factor package enables higher density end products
Occupies just 33% of the board area occupied by SO-8
ESD protected gate

Applications

Backlighting
Power Management Functions
DC-DC Converters

Procurement Notes

Verify that the specific ordering suffix matches the required tape and reel quantity. Confirm AEC-Q101 qualification and PPAP capability are necessary for the intended automotive application. Ensure the component meets IATF 16949 manufacturing standards. Check for RoHS compliance and halogen-free status requirements before finalizing procurement specifications.

Selection Notes

Select this component when space constraints require a footprint significantly smaller than traditional packages like SO-8. Evaluate thermal management needs based on the junction-to-case resistance. Consider the gate threshold voltage characteristics for compatibility with available drive voltages. Verify that the continuous and pulsed current ratings align with the peak load demands of the circuit design.

Part Context

This part belongs to Diodes Incorporated's automotive-grade MOSFET portfolio. It utilizes silicon technology within a molded plastic green molding compound case. The device is designed to meet stringent automotive reliability standards while providing high-density power switching capabilities in a compact surface-mount configuration.