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Product Detailed Parameters
- Description：MOSFET 2P-CH 30V 12.1A PWRDI50
- Series：-
- Mfr：Diodes Incorporated
- Package：Bulk
- Technology：MOSFET (Metal Oxide)
- Configuration：2 P-Channel
- FET Feature：-
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：12.1A (Ta), 38.2A (Tc)
- Rds On (Max) @ Id, Vgs：13mOhm @ 11.5A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：46nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：2380pF @ 15V
- Power - Max：1.4W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-PowerTDFN
- Supplier Device Package：PowerDI5060-8 (Type UXD)
- Grade：-
- Qualification：-
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Overview
The DMP3011SPDW-13 is a dual P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a PowerDI5060-8/SWP package with wettable flanks. The device provides a drain-source voltage (BVDSS) of -30V and a maximum continuous drain current (ID) of -38.2A at TC = +25°C. Static drain-source on-resistance (RDS(ON)) is specified as 13mΩ max at VGS = -10V and 20mΩ max at VGS = -4.5V. Total gate charge (Qg) is 46nC max at VGS = -10V.
Feature Summary
- Dual P-channel configuration integrated into a single thermally efficient package for high conversion efficiency.
- Wettable flank design facilitates improved optical inspection during manufacturing.
- Gate protection diode included to enhance ESD robustness.
- Manufactured using totally lead-free, fully RoHS compliant, and halogen/antimony free materials.
Applications
- Wireless charging systems
- DC-DC converters
- Power management circuits
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the Tape & Reel packing quantity of 2500 units. Confirm that the PowerDI5060-8/SWP package variant matches the required footprint for PCB layout. Ensure compliance with moisture sensitivity level 1 requirements per J-STD-020 standards during storage and handling.
Selection Notes
Select this component when a compact dual P-channel solution is required for low-voltage power paths. The wettable flank feature supports automated optical inspection reliability. Evaluate thermal resistance parameters against the specific ambient temperature constraints of the target application environment.
Part Context
This part belongs to the DMP3011 series of advanced information dual MOSFETs from Diodes Incorporated. It utilizes the PowerDI®5060-8 package technology designed to minimize on-state resistance while maintaining superior switching performance characteristics.
Replacement Considerations
No public confirmed substitute part numbers are available in the provided documentation.
FAQ
What is the maximum continuous drain current rating?
The maximum continuous drain current is -38.2A at a case temperature of +25°C and -30.5A at a case temperature of +70°C.
Does the device include internal gate protection?
Yes, the internal schematic indicates an ESD protected gate with an integrated gate protection diode.
What is the thermal resistance from junction to case?
The thermal resistance from junction to case (RθJC) is 4.4 °C/W.
