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Product Detailed Parameters
- Description：MOSFET BVDSS: 25V~30V PowerDI506
- Series：-
- Mfr：Diodes Incorporated
- Package：Bulk
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：14A (Ta), 65A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：10mOhm @ 11.5A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：46 nC @ 10 V
- Vgs (Max)：±25V
- Input Capacitance (Ciss) (Max) @ Vds：2380 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：1.8W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount, Wettable Flank
- Supplier Device Package：PowerDI5060-8 (Type UX)
- Package / Case：8-PowerTDFN
Download product information
Overview
The DMP3011SPSW-13 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a -30V drain-source breakdown voltage and a maximum continuous drain current of -65A at TC = +25°C. The device offers a typical on-resistance of 7.5mΩ at VGS = -10V and 13.7mΩ at VGS = -4.5V. It operates within a junction temperature range of -55°C to +150°C and utilizes the PowerDI5060-8 package.
Feature Summary
- Designed to minimize on-state resistance while maintaining superior switching performance for high efficiency power management applications.
- Features a package profile of less than 1.1mm, making it suitable for thin application designs.
- Totally lead-free and fully RoHS compliant, with halogen and antimony-free green device construction.
Applications
- DC-DC converters
- Power management functions
- Analog switches
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the Tape & Reel carrier configuration containing 2,500 units per reel. Confirm that the component meets the required environmental standards, specifically RoHS 2/3 compliance and Halogen/Antimony-free definitions as outlined in the manufacturer's quality product definitions. Ensure the selected variant matches the intended thermal and mechanical constraints of the target PCB layout.
Selection Notes
Select this component when designing circuits requiring low on-resistance and fast switching speeds within a 30V system. Consider the PowerDI5060-8 package dimensions and thermal characteristics, particularly the junction-to-case thermal resistance of 2.0°C/W, for effective heat dissipation. Evaluate the gate threshold voltage and total gate charge parameters to ensure compatibility with the driving logic levels and switching frequency requirements of the control circuitry.
Part Context
This part belongs to the DMP3011SPSW series of P-channel MOSFETs from Diodes Incorporated. It is designed as a new generation device focusing on minimizing on-state resistance without compromising switching performance. The component is housed in the PowerDI5060-8 package, which provides a compact footprint and low profile suitable for modern surface-mount assembly processes.
Replacement Considerations
No public confirmed substitute part numbers are available in the provided documentation.
FAQ
What is the maximum continuous drain current rating?
The maximum continuous drain current is -65A at a case temperature of +25°C and -14A at an ambient temperature of +25°C.
Is the device suitable for automotive applications?
For automotive applications requiring specific change control, parts qualified to AEC-Q100/101/104/200, PPAP capability, and manufacturing in IATF 16949 certified facilities, customers must contact Diodes Incorporated or their local representative.
